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Towards a model linking tunnel oxide degradation to programming window closure in EEPROM cells

N Baboux, C Busseret, C Plossu, Stéphane Burignat UGent, B Balland and P Boivin (2003) JOURNAL OF NON-CRYSTALLINE SOLIDS. 322(1-3). p.240-245
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (proceedingsPaper)
publication status
published
subject
keyword
MOS, oxide charge, tunnel oxide, traps, SILC, floating-gate technique, I-V, C-V, model, oxide charging, electron trapping, floating gate, Fowler–Nordheim, EEPROM, Flash memory, window closure, reliability, electrical stress
journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
J. Non-Cryst. Solids
volume
322
issue
1-3
pages
240 - 245
conference name
4th Franco-Italian Symposium on SiO(2) and Advanced Dielectrics
conference location
Trent, Italy
conference start
2002-09-16
conference end
2002-09-18
Web of Science type
Proceedings Paper
Web of Science id
000184235200041
JCR category
MATERIALS SCIENCE, CERAMICS
JCR impact factor
1.563 (2003)
JCR rank
1/25 (2003)
JCR quartile
1 (2003)
ISSN
0022-3093
DOI
10.1016/S0022-3093(03)00208-4
language
English
UGent publication?
no
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
1026542
handle
http://hdl.handle.net/1854/LU-1026542
date created
2010-08-20 09:38:07
date last changed
2016-12-19 15:42:12
@article{1026542,
  author       = {Baboux, N and Busseret, C and Plossu, C and Burignat, St{\'e}phane and Balland, B and Boivin, P},
  issn         = {0022-3093},
  journal      = {JOURNAL OF NON-CRYSTALLINE SOLIDS},
  keyword      = {MOS,oxide charge,tunnel oxide,traps,SILC,floating-gate technique,I-V,C-V,model,oxide charging,electron trapping,floating gate,Fowler--Nordheim,EEPROM,Flash memory,window closure,reliability,electrical stress},
  language     = {eng},
  location     = {Trent, Italy},
  number       = {1-3},
  pages        = {240--245},
  title        = {Towards a model linking tunnel oxide degradation to programming window closure in EEPROM cells},
  url          = {http://dx.doi.org/10.1016/S0022-3093(03)00208-4},
  volume       = {322},
  year         = {2003},
}

Chicago
Baboux, N, C Busseret, C Plossu, Stéphane Burignat, B Balland, and P Boivin. 2003. “Towards a Model Linking Tunnel Oxide Degradation to Programming Window Closure in EEPROM Cells.” Journal of Non-crystalline Solids 322 (1-3): 240–245.
APA
Baboux, N., Busseret, C., Plossu, C., Burignat, S., Balland, B., & Boivin, P. (2003). Towards a model linking tunnel oxide degradation to programming window closure in EEPROM cells. JOURNAL OF NON-CRYSTALLINE SOLIDS, 322(1-3), 240–245. Presented at the 4th Franco-Italian Symposium on SiO(2) and Advanced Dielectrics.
Vancouver
1.
Baboux N, Busseret C, Plossu C, Burignat S, Balland B, Boivin P. Towards a model linking tunnel oxide degradation to programming window closure in EEPROM cells. JOURNAL OF NON-CRYSTALLINE SOLIDS. 2003;322(1-3):240–5.
MLA
Baboux, N, C Busseret, C Plossu, et al. “Towards a Model Linking Tunnel Oxide Degradation to Programming Window Closure in EEPROM Cells.” JOURNAL OF NON-CRYSTALLINE SOLIDS 322.1-3 (2003): 240–245. Print.