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Structural properties of Ge-implanted SiO2 layers and related MOS memory effects

S Duguay, A Slaoui, JJ Grob, M Kanoun, Stéphane Burignat UGent and A Souifi (2005) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 124. p.488-493
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (proceedingsPaper)
publication status
published
subject
keyword
SILICON, COULOMB-BLOCKADE, NANOCRYSTALS, THIN, ION-IMPLANTATION, retention, memory, RBS, TEM, germanium, ion implantation, nanocrystal
journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Mater. Sci. Eng. B-Solid State Mater. Adv. Technol.
volume
124
pages
488 - 493
conference name
Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting
conference location
Strasbourg, France
conference start
2005-12-05
conference end
2005-12-05
Web of Science type
Proceedings Paper
Web of Science id
000233895800102
JCR category
MATERIALS SCIENCE, MULTIDISCIPLINARY
JCR impact factor
1.281 (2005)
JCR rank
58/175 (2005)
JCR quartile
2 (2005)
ISSN
0921-5107
DOI
10.1016/j.mseb.2005.08.089
language
English
UGent publication?
no
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
1026534
handle
http://hdl.handle.net/1854/LU-1026534
date created
2010-08-20 09:38:07
date last changed
2010-08-20 11:52:31
@article{1026534,
  author       = {Duguay, S and Slaoui, A and Grob, JJ and Kanoun, M and Burignat, St{\'e}phane and Souifi, A},
  issn         = {0921-5107},
  journal      = {MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY},
  keyword      = {SILICON,COULOMB-BLOCKADE,NANOCRYSTALS,THIN,ION-IMPLANTATION,retention,memory,RBS,TEM,germanium,ion implantation,nanocrystal},
  language     = {eng},
  location     = {Strasbourg, France},
  pages        = {488--493},
  title        = {Structural properties of Ge-implanted SiO2 layers and related MOS memory effects},
  url          = {http://dx.doi.org/10.1016/j.mseb.2005.08.089},
  volume       = {124},
  year         = {2005},
}

Chicago
Duguay, S, A Slaoui, JJ Grob, M Kanoun, Stéphane Burignat, and A Souifi. 2005. “Structural Properties of Ge-implanted SiO2 Layers and Related MOS Memory Effects.” Materials Science and Engineering B-solid State Materials for Advanced Technology 124: 488–493.
APA
Duguay, S., Slaoui, A., Grob, J., Kanoun, M., Burignat, S., & Souifi, A. (2005). Structural properties of Ge-implanted SiO2 layers and related MOS memory effects. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 124, 488–493. Presented at the Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting.
Vancouver
1.
Duguay S, Slaoui A, Grob J, Kanoun M, Burignat S, Souifi A. Structural properties of Ge-implanted SiO2 layers and related MOS memory effects. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 2005;124:488–93.
MLA
Duguay, S, A Slaoui, JJ Grob, et al. “Structural Properties of Ge-implanted SiO2 Layers and Related MOS Memory Effects.” MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 124 (2005): 488–493. Print.