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Structural properties of Ge-implanted SiO2 layers and related MOS memory effects

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SILICON, COULOMB-BLOCKADE, NANOCRYSTALS, THIN, ION-IMPLANTATION, retention, memory, RBS, TEM, germanium, ion implantation, nanocrystal

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MLA
Duguay, S, A Slaoui, JJ Grob, et al. “Structural Properties of Ge-implanted SiO2 Layers and Related MOS Memory Effects.” MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 124 (2005): 488–493. Print.
APA
Duguay, S., Slaoui, A., Grob, J., Kanoun, M., Burignat, S., & Souifi, A. (2005). Structural properties of Ge-implanted SiO2 layers and related MOS memory effects. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 124, 488–493. Presented at the Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting.
Chicago author-date
Duguay, S, A Slaoui, JJ Grob, M Kanoun, Stéphane Burignat, and A Souifi. 2005. “Structural Properties of Ge-implanted SiO2 Layers and Related MOS Memory Effects.” Materials Science and Engineering B-solid State Materials for Advanced Technology 124: 488–493.
Chicago author-date (all authors)
Duguay, S, A Slaoui, JJ Grob, M Kanoun, Stéphane Burignat, and A Souifi. 2005. “Structural Properties of Ge-implanted SiO2 Layers and Related MOS Memory Effects.” Materials Science and Engineering B-solid State Materials for Advanced Technology 124: 488–493.
Vancouver
1.
Duguay S, Slaoui A, Grob J, Kanoun M, Burignat S, Souifi A. Structural properties of Ge-implanted SiO2 layers and related MOS memory effects. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 2005;124:488–93.
IEEE
[1]
S. Duguay, A. Slaoui, J. Grob, M. Kanoun, S. Burignat, and A. Souifi, “Structural properties of Ge-implanted SiO2 layers and related MOS memory effects,” MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol. 124, pp. 488–493, 2005.
@article{1026534,
  author       = {Duguay, S and Slaoui, A and Grob, JJ and Kanoun, M and Burignat, Stéphane and Souifi, A},
  issn         = {0921-5107},
  journal      = {MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY},
  keywords     = {SILICON,COULOMB-BLOCKADE,NANOCRYSTALS,THIN,ION-IMPLANTATION,retention,memory,RBS,TEM,germanium,ion implantation,nanocrystal},
  language     = {eng},
  location     = {Strasbourg, France},
  pages        = {488--493},
  title        = {Structural properties of Ge-implanted SiO2 layers and related MOS memory effects},
  url          = {http://dx.doi.org/10.1016/j.mseb.2005.08.089},
  volume       = {124},
  year         = {2005},
}

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