Advanced search
Add to list
Author
Organization
Abstract
This paper describes a family of novel dynamically reconfigurable logic gates with double-gate carbon nanotube field-effect transistors (DG-CNTFET). The design is based on a property specific to this device: ambivalence, enabling p-type or n-type behavior depending on the back-gate voltage. Through simulations using available models, these gates and a 10-function ALU offering fine-grain reconfigurability are shown to operate at 20GHz.

Citation

Please use this url to cite or link to this publication:

MLA
O’Connor, I, J Liu, D Navarro, et al. “Ultra-fine Grain Reconfigurability Using CNTFETs.” IEEE International Conference on Electronics, Circuits, and Systems. New York, NY, USA: IEEE, 2007. 194–197. Print.
APA
O’Connor, I, Liu, J., Navarro, D., Hassoune, I., Burignat, S., & Gaffiot, F. (2007). Ultra-fine grain reconfigurability using CNTFETs. IEEE International Conference on Electronics, Circuits, and Systems (pp. 194–197). Presented at the 2007 14th IEEE International Conference on Electronics, Circuits and Systems (ICECS 2007), New York, NY, USA: IEEE.
Chicago author-date
O’Connor, I, J Liu, D Navarro, I Hassoune, Stéphane Burignat, and F Gaffiot. 2007. “Ultra-fine Grain Reconfigurability Using CNTFETs.” In IEEE International Conference on Electronics, Circuits, and Systems, 194–197. New York, NY, USA: IEEE.
Chicago author-date (all authors)
O’Connor, I, J Liu, D Navarro, I Hassoune, Stéphane Burignat, and F Gaffiot. 2007. “Ultra-fine Grain Reconfigurability Using CNTFETs.” In IEEE International Conference on Electronics, Circuits, and Systems, 194–197. New York, NY, USA: IEEE.
Vancouver
1.
O’Connor I, Liu J, Navarro D, Hassoune I, Burignat S, Gaffiot F. Ultra-fine grain reconfigurability using CNTFETs. IEEE International Conference on Electronics, Circuits, and Systems. New York, NY, USA: IEEE; 2007. p. 194–7.
IEEE
[1]
I. O’Connor, J. Liu, D. Navarro, I. Hassoune, S. Burignat, and F. Gaffiot, “Ultra-fine grain reconfigurability using CNTFETs,” in IEEE International Conference on Electronics, Circuits, and Systems, Marrakech, Morocco, 2007, pp. 194–197.
@inproceedings{1026520,
  abstract     = {This paper describes a family of novel dynamically reconfigurable logic gates with double-gate carbon nanotube field-effect transistors (DG-CNTFET). The design is based on a property specific to this device: ambivalence, enabling p-type or n-type behavior depending on the back-gate voltage. Through simulations using available models, these gates and a 10-function ALU offering fine-grain reconfigurability are shown to operate at 20GHz.},
  author       = {O'Connor, I and Liu, J and Navarro, D and Hassoune, I and Burignat, Stéphane and Gaffiot, F},
  booktitle    = {IEEE International Conference on Electronics, Circuits, and Systems},
  isbn         = {9781424413775},
  language     = {eng},
  location     = {Marrakech, Morocco},
  pages        = {194--197},
  publisher    = {IEEE},
  title        = {Ultra-fine grain reconfigurability using CNTFETs},
  year         = {2007},
}

Web of Science
Times cited: