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Retention in metal-oxide-semiconductor structures with two embedded self-aligned Ge-nanocrystal layers

S Duguay, Stéphane Burignat UGent, P Kern, JJ Grob, A Souifi and A Slaoui (2007) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 22(8). p.837-842
abstract
Structural and electrical characterization has been carried out on metal–oxide–semiconductor (MOS) structures with a silicon dioxide (SiO2) layer containing a germanium nanocrystals (Ge-ncs) floating gate. Ge-nc layers were embedded in SiO2 by ion implantation with subsequent annealing. Structural analysis proved the presence of two self-aligned nanocrystal layers within the SiO2 host material. The electrical results indicate a strong memory effect due to the presence of a near-interface Ge-nc layer. Few volts memory windows can easily be obtained at relatively low programming voltages (<6 V). For comparison, operating voltages used in current FLASH technology are about 12 V. Despite its promising structural properties, retention times extracted from capacitance measurements and scanning Kelvin microscopy were found to be too low (~105 s) to comply with the non-volatility industry requirements (<10 years required).
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
AFM, flash, EFM, MOS, self-aligned nanocrystal, memory, probe, Kelvin microscopy, Ge-nc, germanium nanocristal, nanocrystal, electrical characterization, layer
journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Semicond. Sci. Technol.
volume
22
issue
8
pages
837 - 842
Web of Science type
Article
Web of Science id
000248674100002
JCR category
ENGINEERING, ELECTRICAL & ELECTRONIC
JCR impact factor
1.899 (2007)
JCR rank
30/196 (2007)
JCR quartile
1 (2007)
ISSN
0268-1242
DOI
10.1088/0268-1242/22/8/001
language
English
UGent publication?
no
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
1026512
handle
http://hdl.handle.net/1854/LU-1026512
date created
2010-08-20 09:38:07
date last changed
2010-08-23 18:11:25
@article{1026512,
  abstract     = {Structural and electrical characterization has been carried out on metal--oxide--semiconductor (MOS) structures with a silicon dioxide (SiO2) layer containing a germanium nanocrystals (Ge-ncs) floating gate. Ge-nc layers were embedded in SiO2  by ion implantation with subsequent annealing. Structural analysis proved the presence of two self-aligned nanocrystal layers within the SiO2 host material. The electrical results indicate a strong memory effect due to the presence of a near-interface Ge-nc layer. Few volts memory windows can easily be obtained at relatively low programming voltages ({\textlangle}6 V). For comparison, operating voltages used in current FLASH technology are about 12 V. Despite its promising structural properties, retention times extracted from capacitance measurements and scanning Kelvin microscopy were found to be too low ({\texttildelow}105 s) to comply with the non-volatility industry requirements ({\textlangle}10 years required).},
  author       = {Duguay, S and Burignat, St{\'e}phane and Kern, P and Grob, JJ and Souifi, A and Slaoui, A},
  issn         = {0268-1242},
  journal      = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
  keyword      = {AFM,flash,EFM,MOS,self-aligned nanocrystal,memory,probe,Kelvin microscopy,Ge-nc,germanium nanocristal,nanocrystal,electrical characterization,layer},
  language     = {eng},
  number       = {8},
  pages        = {837--842},
  title        = {Retention in metal-oxide-semiconductor structures with two embedded self-aligned Ge-nanocrystal layers},
  url          = {http://dx.doi.org/10.1088/0268-1242/22/8/001},
  volume       = {22},
  year         = {2007},
}

Chicago
Duguay, S, Stéphane Burignat, P Kern, JJ Grob, A Souifi, and A Slaoui. 2007. “Retention in Metal-oxide-semiconductor Structures with Two Embedded Self-aligned Ge-nanocrystal Layers.” Semiconductor Science and Technology 22 (8): 837–842.
APA
Duguay, S., Burignat, S., Kern, P., Grob, J., Souifi, A., & Slaoui, A. (2007). Retention in metal-oxide-semiconductor structures with two embedded self-aligned Ge-nanocrystal layers. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 22(8), 837–842.
Vancouver
1.
Duguay S, Burignat S, Kern P, Grob J, Souifi A, Slaoui A. Retention in metal-oxide-semiconductor structures with two embedded self-aligned Ge-nanocrystal layers. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2007;22(8):837–42.
MLA
Duguay, S, Stéphane Burignat, P Kern, et al. “Retention in Metal-oxide-semiconductor Structures with Two Embedded Self-aligned Ge-nanocrystal Layers.” SEMICONDUCTOR SCIENCE AND TECHNOLOGY 22.8 (2007): 837–842. Print.