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Spatial and energetical profiles of defects extracted from ultra-low level trap-assisted leakage current in non-volatile floating thin tunnel oxide memory devices by using direct and floating gate technique measurements

(2007) JOURNAL OF NON-CRYSTALLINE SOLIDS. 353(16-17). p.1624-1630
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Modeling and simulation, Dielectric properties, Structure, electric modulus, relaxation, Conductivity, Electrical and electronic properties, Thin film transistors, Diffusion and transport, Amorphous semiconductors, Silicon, HOLE, SILICON, MOS-TRANSISTORS, Defects, DEGRADATION

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Chicago
Burignat, Stéphane, C Plossu, and P Boivin. 2007. “Spatial and Energetical Profiles of Defects Extracted from Ultra-low Level Trap-assisted Leakage Current in Non-volatile Floating Thin Tunnel Oxide Memory Devices by Using Direct and Floating Gate Technique Measurements.” Journal of Non-crystalline Solids 353 (16-17): 1624–1630.
APA
Burignat, S., Plossu, C., & Boivin, P. (2007). Spatial and energetical profiles of defects extracted from ultra-low level trap-assisted leakage current in non-volatile floating thin tunnel oxide memory devices by using direct and floating gate technique measurements. JOURNAL OF NON-CRYSTALLINE SOLIDS, 353(16-17), 1624–1630.
Vancouver
1.
Burignat S, Plossu C, Boivin P. Spatial and energetical profiles of defects extracted from ultra-low level trap-assisted leakage current in non-volatile floating thin tunnel oxide memory devices by using direct and floating gate technique measurements. JOURNAL OF NON-CRYSTALLINE SOLIDS. 2007;353(16-17):1624–30.
MLA
Burignat, Stéphane, C Plossu, and P Boivin. “Spatial and Energetical Profiles of Defects Extracted from Ultra-low Level Trap-assisted Leakage Current in Non-volatile Floating Thin Tunnel Oxide Memory Devices by Using Direct and Floating Gate Technique Measurements.” JOURNAL OF NON-CRYSTALLINE SOLIDS 353.16-17 (2007): 1624–1630. Print.
@article{1026507,
  author       = {Burignat, Stéphane and Plossu, C and Boivin, P},
  issn         = {0022-3093},
  journal      = {JOURNAL OF NON-CRYSTALLINE SOLIDS},
  keywords     = {Modeling and simulation,Dielectric properties,Structure,electric modulus,relaxation,Conductivity,Electrical and electronic properties,Thin film transistors,Diffusion and transport,Amorphous semiconductors,Silicon,HOLE,SILICON,MOS-TRANSISTORS,Defects,DEGRADATION},
  language     = {eng},
  number       = {16-17},
  pages        = {1624--1630},
  title        = {Spatial and energetical profiles of defects extracted from ultra-low level trap-assisted leakage current in non-volatile floating thin tunnel oxide memory devices by using direct and floating gate technique measurements},
  url          = {http://dx.doi.org/10.1016/j.jnoncrysol.2007.01.021},
  volume       = {353},
  year         = {2007},
}

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