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Underlap channel UTBB MOSFETs for low-power analog/RF applications

A Kranti, Stéphane Burignat UGent, J-P Raskin and GA Armstrong (2009) ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON. p.173-176
abstract
In this work, we report on the significance of underlap channel architecture in Ultra Thin Body BOX (UTBB) fully-depleted (FD) SOI MOSFETs to improve analog/RF performance metrics. It is shown that at lower current levels and shorter gate lengths, underlap UTBB MOSFETs can achieve significant improvement > 1.5 times in key analog/RF metrics over devices designed with conventional S/D architecture. Analog/RF figures of merit are analyzed in terms of spacer-to-straggle ratio (s/sigma), a key parameter for the design of underlap devices. Results suggest that underlap S/D design with s/sigma ratio of 3.3 is optimum to enhance analog/RF metrics at low current levels (< 60 muA/mum). The present work provides new viewpoints for realizing future low-power analog devices/circuits with underlap UTBB FETs.
Please use this url to cite or link to this publication:
author
organization
year
type
conference (proceedingsPaper)
publication status
published
subject
in
ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON
editor
S Mantl, M Lemme, J Schubert and W Albrecht
pages
173 - 176
publisher
IEEE
place of publication
New York, NY, USA
conference name
2009 10th International Conference on ULtimate Integration on Silicon (ULIS)
conference location
Aachen, Germany
conference start
2009-03-18
conference end
2009-03-20
Web of Science type
Proceedings Paper
Web of Science id
000266761300041
ISBN
9781424437054
DOI
10.1109/ULIS.2009.4897564
language
English
UGent publication?
no
classification
P1
id
1026473
handle
http://hdl.handle.net/1854/LU-1026473
date created
2010-08-20 09:38:07
date last changed
2017-01-02 09:52:39
@inproceedings{1026473,
  abstract     = {In this work, we report on the significance of underlap channel architecture in Ultra Thin Body BOX (UTBB) fully-depleted (FD) SOI MOSFETs to improve analog/RF performance metrics. It is shown that at lower current levels and shorter gate lengths, underlap UTBB MOSFETs can achieve significant improvement {\textrangle} 1.5 times in key analog/RF metrics over devices designed with conventional S/D architecture. Analog/RF figures of merit are analyzed in terms of spacer-to-straggle ratio (s/sigma), a key parameter for the design of underlap devices. Results suggest that underlap S/D design with s/sigma ratio of 3.3 is optimum to enhance analog/RF metrics at low current levels ({\textlangle} 60 muA/mum). The present work provides new viewpoints for realizing future low-power analog devices/circuits with underlap UTBB FETs.},
  author       = {Kranti, A and Burignat, St{\'e}phane and Raskin, J-P and Armstrong, GA},
  booktitle    = {ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON},
  editor       = {Mantl, S and Lemme, M and Schubert, J and Albrecht, W},
  isbn         = {9781424437054},
  language     = {eng},
  location     = {Aachen, Germany},
  pages        = {173--176},
  publisher    = {IEEE},
  title        = {Underlap channel UTBB MOSFETs for low-power analog/RF applications},
  url          = {http://dx.doi.org/10.1109/ULIS.2009.4897564},
  year         = {2009},
}

Chicago
Kranti, A, Stéphane Burignat, J-P Raskin, and GA Armstrong. 2009. “Underlap Channel UTBB MOSFETs for Low-power analog/RF Applications.” In ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON, ed. S Mantl, M Lemme, J Schubert, and W Albrecht, 173–176. New York, NY, USA: IEEE.
APA
Kranti, A., Burignat, S., Raskin, J.-P., & Armstrong, G. (2009). Underlap channel UTBB MOSFETs for low-power analog/RF applications. In S. Mantl, M. Lemme, J. Schubert, & W. Albrecht (Eds.), ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON (pp. 173–176). Presented at the 2009 10th International Conference on ULtimate Integration on Silicon (ULIS), New York, NY, USA: IEEE.
Vancouver
1.
Kranti A, Burignat S, Raskin J-P, Armstrong G. Underlap channel UTBB MOSFETs for low-power analog/RF applications. In: Mantl S, Lemme M, Schubert J, Albrecht W, editors. ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON. New York, NY, USA: IEEE; 2009. p. 173–6.
MLA
Kranti, A, Stéphane Burignat, J-P Raskin, et al. “Underlap Channel UTBB MOSFETs for Low-power analog/RF Applications.” ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON. Ed. S Mantl et al. New York, NY, USA: IEEE, 2009. 173–176. Print.