Advanced search
1 file | 1.00 MB Add to list

Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel

(2010) SOLID-STATE ELECTRONICS. 54(2). p.213-219
Author
Organization
Keywords
Substrate coupling, SOI MOSFET, UTB, Thin BOX, Subthreshold slope, Short channel effect, INTEGRATION, DEVICES, BOX, CMOS

Downloads

  • (...).pdf
    • full text
    • |
    • UGent only
    • |
    • PDF
    • |
    • 1.00 MB

Citation

Please use this url to cite or link to this publication:

MLA
Burignat, Stéphane, D Flandre, MK Md Arshad, et al. “Substrate Impact on Threshold Voltage and Subthreshold Slope of Sub-32 Nm Ultra Thin SOI MOSFETs with Thin Buried Oxide and Undoped Channel.” SOLID-STATE ELECTRONICS 54.2 (2010): 213–219. Print.
APA
Burignat, S., Flandre, D., Md Arshad, M., Kilchytska, V., Andrieu, F., Faynot, O., & Raskin, J.-P. (2010). Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel. SOLID-STATE ELECTRONICS, 54(2), 213–219. Presented at the 5th Workshop of the Thematic Network on Silicon-on-Insulator Technology Devices and Circuits (EUROSOI 2009).
Chicago author-date
Burignat, Stéphane, D Flandre, MK Md Arshad, V Kilchytska, F Andrieu, O Faynot, and J-P Raskin. 2010. “Substrate Impact on Threshold Voltage and Subthreshold Slope of Sub-32 Nm Ultra Thin SOI MOSFETs with Thin Buried Oxide and Undoped Channel.” Solid-state Electronics 54 (2): 213–219.
Chicago author-date (all authors)
Burignat, Stéphane, D Flandre, MK Md Arshad, V Kilchytska, F Andrieu, O Faynot, and J-P Raskin. 2010. “Substrate Impact on Threshold Voltage and Subthreshold Slope of Sub-32 Nm Ultra Thin SOI MOSFETs with Thin Buried Oxide and Undoped Channel.” Solid-state Electronics 54 (2): 213–219.
Vancouver
1.
Burignat S, Flandre D, Md Arshad M, Kilchytska V, Andrieu F, Faynot O, et al. Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel. SOLID-STATE ELECTRONICS. 2010;54(2):213–9.
IEEE
[1]
S. Burignat et al., “Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel,” SOLID-STATE ELECTRONICS, vol. 54, no. 2, pp. 213–219, 2010.
@article{1026464,
  author       = {{Burignat, Stéphane and Flandre, D and Md Arshad, MK and Kilchytska, V and Andrieu, F and Faynot, O and Raskin, J-P}},
  issn         = {{0038-1101}},
  journal      = {{SOLID-STATE ELECTRONICS}},
  keywords     = {{Substrate coupling,SOI MOSFET,UTB,Thin BOX,Subthreshold slope,Short channel effect,INTEGRATION,DEVICES,BOX,CMOS}},
  language     = {{eng}},
  location     = {{Gothenberg, Sweden}},
  number       = {{2}},
  pages        = {{213--219}},
  title        = {{Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel}},
  url          = {{http://dx.doi.org/10.1016/j.sse.2009.12.021}},
  volume       = {{54}},
  year         = {{2010}},
}

Altmetric
View in Altmetric
Web of Science
Times cited: