Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides
- Author
- T Rudenko, V Kilchytska, Stéphane Burignat (UGent) , J-P Raskin, F Andrieu, O Faynot, Y Le Tiec, K Landry, A Nazarov, VS Lysenko and D Flandre
- Organization
- Keywords
- ENHANCEMENT, ELECTRON, MODE, CHANNEL, N-MOSFETS, SOI MOSFET, Ultra-thin SOI, Mobility, Subthreshold slope, Thin buried oxide, Threshold voltage
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-1026451
- MLA
- Rudenko, T., et al. “Experimental Study of Transconductance and Mobility Behaviors in Ultra-Thin SOI MOSFETs with Standard and Thin Buried Oxides.” SOLID-STATE ELECTRONICS, vol. 54, no. 2, 2010, pp. 164–70, doi:10.1016/j.sse.2009.12.014.
- APA
- Rudenko, T., Kilchytska, V., Burignat, S., Raskin, J.-P., Andrieu, F., Faynot, O., … Flandre, D. (2010). Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides. SOLID-STATE ELECTRONICS, 54(2), 164–170. https://doi.org/10.1016/j.sse.2009.12.014
- Chicago author-date
- Rudenko, T, V Kilchytska, Stéphane Burignat, J-P Raskin, F Andrieu, O Faynot, Y Le Tiec, et al. 2010. “Experimental Study of Transconductance and Mobility Behaviors in Ultra-Thin SOI MOSFETs with Standard and Thin Buried Oxides.” SOLID-STATE ELECTRONICS 54 (2): 164–70. https://doi.org/10.1016/j.sse.2009.12.014.
- Chicago author-date (all authors)
- Rudenko, T, V Kilchytska, Stéphane Burignat, J-P Raskin, F Andrieu, O Faynot, Y Le Tiec, K Landry, A Nazarov, VS Lysenko, and D Flandre. 2010. “Experimental Study of Transconductance and Mobility Behaviors in Ultra-Thin SOI MOSFETs with Standard and Thin Buried Oxides.” SOLID-STATE ELECTRONICS 54 (2): 164–70. doi:10.1016/j.sse.2009.12.014.
- Vancouver
- 1.Rudenko T, Kilchytska V, Burignat S, Raskin J-P, Andrieu F, Faynot O, et al. Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides. SOLID-STATE ELECTRONICS. 2010;54(2):164–70.
- IEEE
- [1]T. Rudenko et al., “Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides,” SOLID-STATE ELECTRONICS, vol. 54, no. 2, pp. 164–70, 2010.
@article{1026451,
author = {{Rudenko, T and Kilchytska, V and Burignat, Stéphane and Raskin, J-P and Andrieu, F and Faynot, O and Le Tiec, Y and Landry, K and Nazarov, A and Lysenko, VS and Flandre, D}},
issn = {{0038-1101}},
journal = {{SOLID-STATE ELECTRONICS}},
keywords = {{ENHANCEMENT,ELECTRON,MODE,CHANNEL,N-MOSFETS,SOI MOSFET,Ultra-thin SOI,Mobility,Subthreshold slope,Thin buried oxide,Threshold voltage}},
language = {{eng}},
location = {{Gothenberg, Sweden}},
number = {{2}},
pages = {{164--70}},
title = {{Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides}},
url = {{http://doi.org/10.1016/j.sse.2009.12.014}},
volume = {{54}},
year = {{2010}},
}
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