Advanced search
1 file | 936.65 KB Add to list

Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides

(2010) SOLID-STATE ELECTRONICS. 54(2). p.164-70
Author
Organization
Keywords
ENHANCEMENT, ELECTRON, MODE, CHANNEL, N-MOSFETS, SOI MOSFET, Ultra-thin SOI, Mobility, Subthreshold slope, Thin buried oxide, Threshold voltage

Downloads

  • (...).pdf
    • full text
    • |
    • UGent only
    • |
    • PDF
    • |
    • 936.65 KB

Citation

Please use this url to cite or link to this publication:

MLA
Rudenko, T, V Kilchytska, Stéphane Burignat, et al. “Experimental Study of Transconductance and Mobility Behaviors in Ultra-thin SOI MOSFETs with Standard and Thin Buried Oxides.” SOLID-STATE ELECTRONICS 54.2 (2010): 164–70. Print.
APA
Rudenko, T, Kilchytska, V., Burignat, S., Raskin, J.-P., Andrieu, F., Faynot, O., Le Tiec, Y., et al. (2010). Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides. SOLID-STATE ELECTRONICS, 54(2), 164–70. Presented at the 5th Workshop of the Thematic Network on Silicon-on-Insulator Technology Devices and Circuits (EUROSOI 2009).
Chicago author-date
Rudenko, T, V Kilchytska, Stéphane Burignat, J-P Raskin, F Andrieu, O Faynot, Y Le Tiec, et al. 2010. “Experimental Study of Transconductance and Mobility Behaviors in Ultra-thin SOI MOSFETs with Standard and Thin Buried Oxides.” Solid-state Electronics 54 (2): 164–70.
Chicago author-date (all authors)
Rudenko, T, V Kilchytska, Stéphane Burignat, J-P Raskin, F Andrieu, O Faynot, Y Le Tiec, K Landry, A Nazarov, VS Lysenko, and D Flandre. 2010. “Experimental Study of Transconductance and Mobility Behaviors in Ultra-thin SOI MOSFETs with Standard and Thin Buried Oxides.” Solid-state Electronics 54 (2): 164–70.
Vancouver
1.
Rudenko T, Kilchytska V, Burignat S, Raskin J-P, Andrieu F, Faynot O, et al. Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides. SOLID-STATE ELECTRONICS. 2010;54(2):164–70.
IEEE
[1]
T. Rudenko et al., “Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides,” SOLID-STATE ELECTRONICS, vol. 54, no. 2, pp. 164–70, 2010.
@article{1026451,
  author       = {{Rudenko, T and Kilchytska, V and Burignat, Stéphane and Raskin, J-P and Andrieu, F and Faynot, O and Le Tiec, Y and Landry, K and Nazarov, A and Lysenko, VS and Flandre, D}},
  issn         = {{0038-1101}},
  journal      = {{SOLID-STATE ELECTRONICS}},
  keywords     = {{ENHANCEMENT,ELECTRON,MODE,CHANNEL,N-MOSFETS,SOI MOSFET,Ultra-thin SOI,Mobility,Subthreshold slope,Thin buried oxide,Threshold voltage}},
  language     = {{eng}},
  location     = {{Gothenberg, Sweden}},
  number       = {{2}},
  pages        = {{164--70}},
  title        = {{Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides}},
  url          = {{http://dx.doi.org/10.1016/j.sse.2009.12.014}},
  volume       = {{54}},
  year         = {{2010}},
}

Altmetric
View in Altmetric
Web of Science
Times cited: