RF equivalent circuit model for GeSi quantum confined stark effect electro-absorption modulators
- Author
- Ahmed Kandeel (UGent) , Minkyu Kim, Amir Khaled Abdelhamid Mohamed Shahin (UGent) , Peter De Heyn, Chih-Kuo Neil Tseng, Javad Rahimi Vaskasi, Yosuke Shimura, Maumita Chakrabarti, Dimitrios Velenis, Dries Van Thourhout (UGent) , Filippo Ferraro, Yoojin Ban and Joris Van Campenhout
- Organization
- Abstract
- We present an RF equivalent circuit model for GeSi quantum confined stark effect (QCSE) electro-absorption modulator (EAM) integrated in a 300 mm Si photonics platform. The model incorporates two key components: the first captures the contributions from interconnects and bondpads, while the second represents the electrical and optical characteristics of the modulator. The model is validated by fitting it to measured S-11 parameters across various EAM lengths under different bias conditions. The derived circuit parameters are subsequently employed to simulate the electro-optic S-21 response, successfully estimating the EAM 3dB bandwidth in a good agreement with the measured small-signal modulation response. Additionally, deeper insights about the physical interpretation of the S-11 data are obtained by converting the S-11 to the impedance (Z) domain. Our model facilitates the analysis of EAM performance under high-speed operation, identifying the limiting factors for further speed enhancement.
- Keywords
- Integrated circuit modeling, Radio frequency, Bandwidth, Resistance, Inductance, Fitting, Electro-absorption modulators, Equivalent circuits, Metals, Integrated circuit interconnections, Electroabsorption modulators (EAM), quantum confined stark effect, equivalent circuit model, S-1(1) fitting
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-01KG55ADTY6MDS8WRARKHM5TWH
- MLA
- Kandeel, Ahmed, et al. “RF Equivalent Circuit Model for GeSi Quantum Confined Stark Effect Electro-Absorption Modulators.” IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 37, no. 7, 2025, pp. 421–24, doi:10.1109/LPT.2025.3549943.
- APA
- Kandeel, A., Kim, M., Shahin, A. K. A. M., De Heyn, P., Tseng, C.-K. N., Vaskasi, J. R., … Van Campenhout, J. (2025). RF equivalent circuit model for GeSi quantum confined stark effect electro-absorption modulators. IEEE PHOTONICS TECHNOLOGY LETTERS, 37(7), 421–424. https://doi.org/10.1109/LPT.2025.3549943
- Chicago author-date
- Kandeel, Ahmed, Minkyu Kim, Amir Khaled Abdelhamid Mohamed Shahin, Peter De Heyn, Chih-Kuo Neil Tseng, Javad Rahimi Vaskasi, Yosuke Shimura, et al. 2025. “RF Equivalent Circuit Model for GeSi Quantum Confined Stark Effect Electro-Absorption Modulators.” IEEE PHOTONICS TECHNOLOGY LETTERS 37 (7): 421–24. https://doi.org/10.1109/LPT.2025.3549943.
- Chicago author-date (all authors)
- Kandeel, Ahmed, Minkyu Kim, Amir Khaled Abdelhamid Mohamed Shahin, Peter De Heyn, Chih-Kuo Neil Tseng, Javad Rahimi Vaskasi, Yosuke Shimura, Maumita Chakrabarti, Dimitrios Velenis, Dries Van Thourhout, Filippo Ferraro, Yoojin Ban, and Joris Van Campenhout. 2025. “RF Equivalent Circuit Model for GeSi Quantum Confined Stark Effect Electro-Absorption Modulators.” IEEE PHOTONICS TECHNOLOGY LETTERS 37 (7): 421–424. doi:10.1109/LPT.2025.3549943.
- Vancouver
- 1.Kandeel A, Kim M, Shahin AKAM, De Heyn P, Tseng C-KN, Vaskasi JR, et al. RF equivalent circuit model for GeSi quantum confined stark effect electro-absorption modulators. IEEE PHOTONICS TECHNOLOGY LETTERS. 2025;37(7):421–4.
- IEEE
- [1]A. Kandeel et al., “RF equivalent circuit model for GeSi quantum confined stark effect electro-absorption modulators,” IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 37, no. 7, pp. 421–424, 2025.
@article{01KG55ADTY6MDS8WRARKHM5TWH,
abstract = {{We present an RF equivalent circuit model for GeSi quantum confined stark effect (QCSE) electro-absorption modulator (EAM) integrated in a 300 mm Si photonics platform. The model incorporates two key components: the first captures the contributions from interconnects and bondpads, while the second represents the electrical and optical characteristics of the modulator. The model is validated by fitting it to measured S-11 parameters across various EAM lengths under different bias conditions. The derived circuit parameters are subsequently employed to simulate the electro-optic S-21 response, successfully estimating the EAM 3dB bandwidth in a good agreement with the measured small-signal modulation response. Additionally, deeper insights about the physical interpretation of the S-11 data are obtained by converting the S-11 to the impedance (Z) domain. Our model facilitates the analysis of EAM performance under high-speed operation, identifying the limiting factors for further speed enhancement.}},
author = {{Kandeel, Ahmed and Kim, Minkyu and Shahin, Amir Khaled Abdelhamid Mohamed and De Heyn, Peter and Tseng, Chih-Kuo Neil and Vaskasi, Javad Rahimi and Shimura, Yosuke and Chakrabarti, Maumita and Velenis, Dimitrios and Van Thourhout, Dries and Ferraro, Filippo and Ban, Yoojin and Van Campenhout, Joris}},
issn = {{1041-1135}},
journal = {{IEEE PHOTONICS TECHNOLOGY LETTERS}},
keywords = {{Integrated circuit modeling,Radio frequency,Bandwidth,Resistance,Inductance,Fitting,Electro-absorption modulators,Equivalent circuits,Metals,Integrated circuit interconnections,Electroabsorption modulators (EAM),quantum confined stark effect,equivalent circuit model,S-1(1) fitting}},
language = {{eng}},
number = {{7}},
pages = {{421--424}},
title = {{RF equivalent circuit model for GeSi quantum confined stark effect electro-absorption modulators}},
url = {{http://doi.org/10.1109/LPT.2025.3549943}},
volume = {{37}},
year = {{2025}},
}
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