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Model and parameter extraction strategy impact on the estimated values of MOSFET parameters in ohmic operation

Abderrahim Tahiat, Bogdan Cretu, Anabela Veloso and Eddy Simoen (UGent)
(2026) SOLID-STATE ELECTRONICS. 231.
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Abstract
In this work, different Y-function methodologies for the extraction of the electrical MOSFET parameters permitting to model the current–voltage (I–V) transfer characteristics from weak to strong inversion in ohmic mode of operation are compared on ideal I–V characteristics analytically constructed. It is evidenced that even if important discrepancies between the values of the estimated parameters using these methodologies exist, the access resistances value may be predicted with good accuracy. It is demonstrated that if the inversion charge is calculated by combining its asymptotic laws in weak and in strong inversion, this approximation will lead to an about 20% model-induced error in the moderate inversion range. It is proved that the Y-function strategy which permits the best agreement between the extracted parameter values and the reference ones may be a solution to foresee with lower error the inversion charge behavior from weak to strong inversion even without performing capacitance–voltage measurements.
Keywords
MOSFET, Y-function, Parameter extraction, Inversion charge, CARRIER MOBILITY, GATE

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MLA
Tahiat, Abderrahim, et al. “Model and Parameter Extraction Strategy Impact on the Estimated Values of MOSFET Parameters in Ohmic Operation.” SOLID-STATE ELECTRONICS, vol. 231, 2026, doi:10.1016/j.sse.2025.109247.
APA
Tahiat, A., Cretu, B., Veloso, A., & Simoen, E. (2026). Model and parameter extraction strategy impact on the estimated values of MOSFET parameters in ohmic operation. SOLID-STATE ELECTRONICS, 231. https://doi.org/10.1016/j.sse.2025.109247
Chicago author-date
Tahiat, Abderrahim, Bogdan Cretu, Anabela Veloso, and Eddy Simoen. 2026. “Model and Parameter Extraction Strategy Impact on the Estimated Values of MOSFET Parameters in Ohmic Operation.” SOLID-STATE ELECTRONICS 231. https://doi.org/10.1016/j.sse.2025.109247.
Chicago author-date (all authors)
Tahiat, Abderrahim, Bogdan Cretu, Anabela Veloso, and Eddy Simoen. 2026. “Model and Parameter Extraction Strategy Impact on the Estimated Values of MOSFET Parameters in Ohmic Operation.” SOLID-STATE ELECTRONICS 231. doi:10.1016/j.sse.2025.109247.
Vancouver
1.
Tahiat A, Cretu B, Veloso A, Simoen E. Model and parameter extraction strategy impact on the estimated values of MOSFET parameters in ohmic operation. SOLID-STATE ELECTRONICS. 2026;231.
IEEE
[1]
A. Tahiat, B. Cretu, A. Veloso, and E. Simoen, “Model and parameter extraction strategy impact on the estimated values of MOSFET parameters in ohmic operation,” SOLID-STATE ELECTRONICS, vol. 231, 2026.
@article{01K8N6X3R3AGMZ9SX289S9ZNCX,
  abstract     = {{In this work, different Y-function methodologies for the extraction of the electrical MOSFET parameters
permitting to model the current–voltage (I–V) transfer characteristics from weak to strong inversion in ohmic
mode of operation are compared on ideal I–V characteristics analytically constructed. It is evidenced that even if
important discrepancies between the values of the estimated parameters using these methodologies exist, the
access resistances value may be predicted with good accuracy. It is demonstrated that if the inversion charge is
calculated by combining its asymptotic laws in weak and in strong inversion, this approximation will lead to an
about 20% model-induced error in the moderate inversion range.
It is proved that the Y-function strategy which permits the best agreement between the extracted parameter
values and the reference ones may be a solution to foresee with lower error the inversion charge behavior from
weak to strong inversion even without performing capacitance–voltage measurements.}},
  articleno    = {{109247}},
  author       = {{Tahiat, Abderrahim and Cretu, Bogdan and Veloso, Anabela and Simoen, Eddy}},
  issn         = {{0038-1101}},
  journal      = {{SOLID-STATE ELECTRONICS}},
  keywords     = {{MOSFET,Y-function,Parameter extraction,Inversion charge,CARRIER MOBILITY,GATE}},
  language     = {{eng}},
  pages        = {{7}},
  title        = {{Model and parameter extraction strategy impact on the estimated values of MOSFET parameters in ohmic operation}},
  url          = {{http://doi.org/10.1016/j.sse.2025.109247}},
  volume       = {{231}},
  year         = {{2026}},
}
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