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Modeling and analysis of terminal capacitances in high-power devices : application to p-GaN gate HEMTs

Mojtaba Alaei (UGent) , Herbert De Pauw (UGent) , Elena Fabris, Stefaan Decoutere, Jan Doutreloigne (UGent) , Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)
(2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(9). p.4817-4823
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Abstract
Experimental data from gallium nitride (GaN)-on-Si p-GaN gate high-electron-mobility transistors (HEMTs) reveal a strong dependence of terminal capacitances-particularly C-BS, C-BG, and C-BD-on the drain-to-source voltage (V-DS), indicating significant coupling through the bulk contact. This behavior, linked to progressive depletion of the 2-D electron gas (2DEG) under field plates, is not adequately captured by existing compact models. This work presents a detailed analysis of the dynamics of V-DS-dependent depletion under field plates and develops an enhanced MIT Virtual Source GaN FET (MVSG) compact model that incorporates bulk-related capacitance contributions. The proposed model introduces a depletion-dependent modulation of channel and fringing capacitances and captures channel length modulation (CLM) effects due to progressive depletion of 2DEG with increasing V-DS. The extended model shows excellent agreement with the measured capacitance behavior and provides a deeper understanding of the substrate interaction mechanisms. This advancement supports the design of next-generation high-voltage GaN power ICs, such as integrated half-bridges and gate drivers, by enabling accurate prediction of terminal capacitances in simulations that include substrate effects.
Keywords
Capacitance, Logic gates, HEMTs, MODFETs, Capacitance measurement, Couplings, Substrates, Mathematical models, Voltage measurement, Performance evaluation, Back-gating effect, bulk capacitance, bulk, coupling effects, bulk voltage dependency, channel length modulation, (CLM), drain voltage dependency, lateral 2-D electron gas (2DEG), depletion, MVSG model, p-gallium nitride (GaN) gate, high-electron-mobility transistors (HEMTs), silicon-on-insulator (SOI)

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Citation

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MLA
Alaei, Mojtaba, et al. “Modeling and Analysis of Terminal Capacitances in High-Power Devices : Application to p-GaN Gate HEMTs.” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 72, no. 9, 2025, pp. 4817–23, doi:10.1109/ted.2025.3593216.
APA
Alaei, M., De Pauw, H., Fabris, E., Decoutere, S., Doutreloigne, J., Lauwaert, J., & Bakeroot, B. (2025). Modeling and analysis of terminal capacitances in high-power devices : application to p-GaN gate HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 72(9), 4817–4823. https://doi.org/10.1109/ted.2025.3593216
Chicago author-date
Alaei, Mojtaba, Herbert De Pauw, Elena Fabris, Stefaan Decoutere, Jan Doutreloigne, Johan Lauwaert, and Benoit Bakeroot. 2025. “Modeling and Analysis of Terminal Capacitances in High-Power Devices : Application to p-GaN Gate HEMTs.” IEEE TRANSACTIONS ON ELECTRON DEVICES 72 (9): 4817–23. https://doi.org/10.1109/ted.2025.3593216.
Chicago author-date (all authors)
Alaei, Mojtaba, Herbert De Pauw, Elena Fabris, Stefaan Decoutere, Jan Doutreloigne, Johan Lauwaert, and Benoit Bakeroot. 2025. “Modeling and Analysis of Terminal Capacitances in High-Power Devices : Application to p-GaN Gate HEMTs.” IEEE TRANSACTIONS ON ELECTRON DEVICES 72 (9): 4817–4823. doi:10.1109/ted.2025.3593216.
Vancouver
1.
Alaei M, De Pauw H, Fabris E, Decoutere S, Doutreloigne J, Lauwaert J, et al. Modeling and analysis of terminal capacitances in high-power devices : application to p-GaN gate HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2025;72(9):4817–23.
IEEE
[1]
M. Alaei et al., “Modeling and analysis of terminal capacitances in high-power devices : application to p-GaN gate HEMTs,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 72, no. 9, pp. 4817–4823, 2025.
@article{01K2CMZK35F1ZBFT5D99WC4J8P,
  abstract     = {{Experimental data from gallium nitride (GaN)-on-Si p-GaN gate high-electron-mobility transistors (HEMTs) reveal a strong dependence of terminal capacitances-particularly C-BS, C-BG, and C-BD-on the drain-to-source voltage (V-DS), indicating significant coupling through the bulk contact. This behavior, linked to progressive depletion of the 2-D electron gas (2DEG) under field plates, is not adequately captured by existing compact models. This work presents a detailed analysis of the dynamics of V-DS-dependent depletion under field plates and develops an enhanced MIT Virtual Source GaN FET (MVSG) compact model that incorporates bulk-related capacitance contributions. The proposed model introduces a depletion-dependent modulation of channel and fringing capacitances and captures channel length modulation (CLM) effects due to progressive depletion of 2DEG with increasing V-DS. The extended model shows excellent agreement with the measured capacitance behavior and provides a deeper understanding of the substrate interaction mechanisms. This advancement supports the design of next-generation high-voltage GaN power ICs, such as integrated half-bridges and gate drivers, by enabling accurate prediction of terminal capacitances in simulations that include substrate effects.}},
  author       = {{Alaei, Mojtaba and De Pauw, Herbert and Fabris, Elena and Decoutere, Stefaan and Doutreloigne, Jan and Lauwaert, Johan and Bakeroot, Benoit}},
  issn         = {{0018-9383}},
  journal      = {{IEEE TRANSACTIONS ON ELECTRON DEVICES}},
  keywords     = {{Capacitance,Logic gates,HEMTs,MODFETs,Capacitance measurement,Couplings,Substrates,Mathematical models,Voltage measurement,Performance evaluation,Back-gating effect,bulk capacitance,bulk,coupling effects,bulk voltage dependency,channel length modulation,(CLM),drain voltage dependency,lateral 2-D electron gas (2DEG),depletion,MVSG model,p-gallium nitride (GaN) gate,high-electron-mobility transistors (HEMTs),silicon-on-insulator (SOI)}},
  language     = {{eng}},
  number       = {{9}},
  pages        = {{4817--4823}},
  title        = {{Modeling and analysis of terminal capacitances in high-power devices : application to p-GaN gate HEMTs}},
  url          = {{http://doi.org/10.1109/ted.2025.3593216}},
  volume       = {{72}},
  year         = {{2025}},
}
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