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GaAs nano-ridge laser diodes fully fabricated in a 300-mm CMOS pilot line

Yannick De Koninck, Charles Caer, Didit Yudistira, Marina Baryshnikova, Huseyin Sar, Ping-Yi Hsieh, Cenk Ibrahim Oezdemir, Saroj Kanta Patra, Nadezda Kuznetsova, Davide Colucci (UGent) , et al.
(2025) NATURE. 637(8044).
Author
Organization
Abstract
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute and sense the world1, 2, 3, 4, 5-6. However, the lack of highly scalable, native complementary metal-oxide-semiconductor (CMOS)-integrated light sources is one of the main factors hampering its widespread adoption. Despite considerable progress in hybrid and heterogeneous integration of III-V light sources on silicon7, 8, 9, 10, 11-12, monolithic integration by direct epitaxy of III-V materials remains the pinnacle of cost-effective on-chip light sources. Here we report the electrically driven gallium arsenide (GaAs)-based laser diodes fully fabricated on 300-mm Si wafers in a CMOS pilot manufacturing line based on a new integration approach, nano-ridge engineering. GaAs nano-ridge waveguides with embedded p-i-n diodes and InGaAs quantum wells are grown at high quality on a wafer scale. Room-temperature continuous-wave lasing is demonstrated at wavelengths around 1,020 nm in more than 300 devices across a wafer, with threshold currents as low as 5 mA, output powers beyond 1 mW, laser linewidths down to 46 MHz and laser operation up to 55 degrees C. These results illustrate the potential of the III-V/Si nano-ridge engineering concept for the monolithic integration of laser diodes in a Si photonics platform, enabling future cost-sensitive high-volume applications in optical sensing, interconnects and beyond.
Keywords
QUANTUM-DOT LASERS, SELECTIVE-AREA GROWTH, LOW DARK CURRENT, SI, TEMPERATURE, INTEGRATION, LINEWIDTH, PHOTONICS

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Citation

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MLA
De Koninck, Yannick, et al. “GaAs Nano-Ridge Laser Diodes Fully Fabricated in a 300-Mm CMOS Pilot Line.” NATURE, vol. 637, no. 8044, 2025, doi:10.1038/s41586-024-08364-2.
APA
De Koninck, Y., Caer, C., Yudistira, D., Baryshnikova, M., Sar, H., Hsieh, P.-Y., … Van Campenhout, J. (2025). GaAs nano-ridge laser diodes fully fabricated in a 300-mm CMOS pilot line. NATURE, 637(8044). https://doi.org/10.1038/s41586-024-08364-2
Chicago author-date
De Koninck, Yannick, Charles Caer, Didit Yudistira, Marina Baryshnikova, Huseyin Sar, Ping-Yi Hsieh, Cenk Ibrahim Oezdemir, et al. 2025. “GaAs Nano-Ridge Laser Diodes Fully Fabricated in a 300-Mm CMOS Pilot Line.” NATURE 637 (8044). https://doi.org/10.1038/s41586-024-08364-2.
Chicago author-date (all authors)
De Koninck, Yannick, Charles Caer, Didit Yudistira, Marina Baryshnikova, Huseyin Sar, Ping-Yi Hsieh, Cenk Ibrahim Oezdemir, Saroj Kanta Patra, Nadezda Kuznetsova, Davide Colucci, Alexey Milenin, Andualem Ali Yimam, Geert Morthier, Dries Van Thourhout, Peter Verheyen, Marianna Pantouvaki, Bernardette Kunert, and Joris Van Campenhout. 2025. “GaAs Nano-Ridge Laser Diodes Fully Fabricated in a 300-Mm CMOS Pilot Line.” NATURE 637 (8044). doi:10.1038/s41586-024-08364-2.
Vancouver
1.
De Koninck Y, Caer C, Yudistira D, Baryshnikova M, Sar H, Hsieh P-Y, et al. GaAs nano-ridge laser diodes fully fabricated in a 300-mm CMOS pilot line. NATURE. 2025;637(8044).
IEEE
[1]
Y. De Koninck et al., “GaAs nano-ridge laser diodes fully fabricated in a 300-mm CMOS pilot line,” NATURE, vol. 637, no. 8044, 2025.
@article{01K07391FQ3W8NMEEWMCAWW4DA,
  abstract     = {{Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute and sense the world1, 2, 3, 4, 5-6. However, the lack of highly scalable, native complementary metal-oxide-semiconductor (CMOS)-integrated light sources is one of the main factors hampering its widespread adoption. Despite considerable progress in hybrid and heterogeneous integration of III-V light sources on silicon7, 8, 9, 10, 11-12, monolithic integration by direct epitaxy of III-V materials remains the pinnacle of cost-effective on-chip light sources. Here we report the electrically driven gallium arsenide (GaAs)-based laser diodes fully fabricated on 300-mm Si wafers in a CMOS pilot manufacturing line based on a new integration approach, nano-ridge engineering. GaAs nano-ridge waveguides with embedded p-i-n diodes and InGaAs quantum wells are grown at high quality on a wafer scale. Room-temperature continuous-wave lasing is demonstrated at wavelengths around 1,020 nm in more than 300 devices across a wafer, with threshold currents as low as 5 mA, output powers beyond 1 mW, laser linewidths down to 46 MHz and laser operation up to 55 degrees C. These results illustrate the potential of the III-V/Si nano-ridge engineering concept for the monolithic integration of laser diodes in a Si photonics platform, enabling future cost-sensitive high-volume applications in optical sensing, interconnects and beyond.}},
  articleno    = {{147}},
  author       = {{De Koninck, Yannick and Caer, Charles and Yudistira, Didit and Baryshnikova, Marina and Sar, Huseyin and Hsieh, Ping-Yi and Oezdemir, Cenk Ibrahim and Patra, Saroj Kanta and Kuznetsova, Nadezda and Colucci, Davide and Milenin, Alexey and Yimam, Andualem Ali and Morthier, Geert and Van Thourhout, Dries and Verheyen, Peter and Pantouvaki, Marianna and Kunert, Bernardette and Van Campenhout, Joris}},
  issn         = {{0028-0836}},
  journal      = {{NATURE}},
  keywords     = {{QUANTUM-DOT LASERS,SELECTIVE-AREA GROWTH,LOW DARK CURRENT,SI,TEMPERATURE,INTEGRATION,LINEWIDTH,PHOTONICS}},
  language     = {{eng}},
  number       = {{8044}},
  pages        = {{27}},
  title        = {{GaAs nano-ridge laser diodes fully fabricated in a 300-mm CMOS pilot line}},
  url          = {{http://doi.org/10.1038/s41586-024-08364-2}},
  volume       = {{637}},
  year         = {{2025}},
}
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