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Semi-analytical model for electrically injected GaAs nano-ridge laser diodes monolithically integrated on silicon

(2025) OPTICS EXPRESS. 33(2). p.2101-2114
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Abstract
We present a semi-analytical model that can accurately explain the working principle behind the recently reported electrically injected In0.2Ga0.8As/GaAs monolithic nano-ridge lasers and more importantly show how the model can be used to study the effect of device parameters on the spectral behavior, the slope efficiency and the threshold gain. We show that mode beating between the fundamental mode and a higher order mode is fundamental in the operation of these lasers. Analytical expressions for codirectional mode coupling are used in developing the round-trip laser model. Results from analytical expressions are verified by comparisons with simulations and the model is supported later by measurement results.
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SI

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MLA
Yimam, Andualem Ali, et al. “Semi-Analytical Model for Electrically Injected GaAs Nano-Ridge Laser Diodes Monolithically Integrated on Silicon.” OPTICS EXPRESS, vol. 33, no. 2, 2025, pp. 2101–14, doi:10.1364/OE.543613.
APA
Yimam, A. A., Colucci, D., Caer, C., Yudistira, D., DE Koninck, Y., Sar, H., … Van Thourhout, D. (2025). Semi-analytical model for electrically injected GaAs nano-ridge laser diodes monolithically integrated on silicon. OPTICS EXPRESS, 33(2), 2101–2114. https://doi.org/10.1364/OE.543613
Chicago author-date
Yimam, Andualem Ali, Davide Colucci, Charles Caer, Didit Yudistira, Yannick DE Koninck, Huseyin Sar, Marina Baryshnikova, et al. 2025. “Semi-Analytical Model for Electrically Injected GaAs Nano-Ridge Laser Diodes Monolithically Integrated on Silicon.” OPTICS EXPRESS 33 (2): 2101–14. https://doi.org/10.1364/OE.543613.
Chicago author-date (all authors)
Yimam, Andualem Ali, Davide Colucci, Charles Caer, Didit Yudistira, Yannick DE Koninck, Huseyin Sar, Marina Baryshnikova, Peter Verheyen, Joris VAN Campenhout, Bernardette Kunert, Geert Morthier, and Dries Van Thourhout. 2025. “Semi-Analytical Model for Electrically Injected GaAs Nano-Ridge Laser Diodes Monolithically Integrated on Silicon.” OPTICS EXPRESS 33 (2): 2101–2114. doi:10.1364/OE.543613.
Vancouver
1.
Yimam AA, Colucci D, Caer C, Yudistira D, DE Koninck Y, Sar H, et al. Semi-analytical model for electrically injected GaAs nano-ridge laser diodes monolithically integrated on silicon. OPTICS EXPRESS. 2025;33(2):2101–14.
IEEE
[1]
A. A. Yimam et al., “Semi-analytical model for electrically injected GaAs nano-ridge laser diodes monolithically integrated on silicon,” OPTICS EXPRESS, vol. 33, no. 2, pp. 2101–2114, 2025.
@article{01K072999BZQH4SWRYSKY6HYPN,
  abstract     = {{We present a semi-analytical model that can accurately explain the working principle behind the recently reported electrically injected In0.2Ga0.8As/GaAs monolithic nano-ridge lasers and more importantly show how the model can be used to study the effect of device parameters on the spectral behavior, the slope efficiency and the threshold gain. We show that mode beating between the fundamental mode and a higher order mode is fundamental in the operation of these lasers. Analytical expressions for codirectional mode coupling are used in developing the round-trip laser model. Results from analytical expressions are verified by comparisons with simulations and the model is supported later by measurement results.}},
  author       = {{Yimam, Andualem Ali and Colucci, Davide and Caer, Charles and Yudistira, Didit and DE Koninck, Yannick and Sar, Huseyin and Baryshnikova, Marina and Verheyen, Peter and VAN Campenhout, Joris and Kunert, Bernardette and Morthier, Geert and Van Thourhout, Dries}},
  issn         = {{1094-4087}},
  journal      = {{OPTICS EXPRESS}},
  keywords     = {{SI}},
  language     = {{eng}},
  number       = {{2}},
  pages        = {{2101--2114}},
  title        = {{Semi-analytical model for electrically injected GaAs nano-ridge laser diodes monolithically integrated on silicon}},
  url          = {{http://doi.org/10.1364/OE.543613}},
  volume       = {{33}},
  year         = {{2025}},
}

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