A 64-GHz optical receiver for 128-GBd links using a 55-nm SiGe BiCMOS traveling-wave linear transimpedance amplifier
- Author
- Jakob Declercq (UGent) , Bart Moeneclaey (UGent) , Joris Lambrecht (UGent) , Cédric Bruynsteen (UGent) , Nishant Singh (UGent) , Shengpu Niu (UGent) , Peter Ossieur (UGent) and Xin Yin (UGent)
- Organization
- Project
- Abstract
- We present an optical receiver using a SiGe BiCMOS transimpedance amplifier (TIA) chip with a 3 dB bandwidth over 67 GHz and a transimpedance gain up to 77 dB$\Omega$. This TIA consists of a single-ended input stage and two differential gain stages followed by a differential output stage. These traveling-wave stages feature variable gain and peaking. A TIA channel consumes 487.5 mW, or 2.2 pJ/bit operating at 112 GBd PAM-4, and occupies a chip area of 1.125 mm(2). The THD at 1 GHz (10 GHz) is kept below 2% (5%) for input swings up to 1.6 mApp (1.3 mApp) by reducing the gain. After wire bonding the input of this TIA to a silicon photonic germanium photodiode, a bandwidth of 64 GHz and a group delay variation of 20.3 ps are obtained. Using a 10-tap feedforward equalizer (FFE), opto-electrical eye diagrams are captured and for 128 GBd NRZ, a sensitivity of -5.9 dBm is measured at a bit error rate (BER) of 1E-12. For 112 GBd PAM4, the KP4 sensitivity level is -4.8 dBm. The input-referred noise is measured at 18.8pA/root Hz
- Keywords
- Photodiodes, Integrated circuit modeling, Bandwidth, Transistors, Topology, Impedance, BiCMOS integrated circuits, Gain, Semiconductor device measurement, Wire, broadband amplifiers, distributed amplifiers, high-speed electronics, optical receivers, photodiodes, silicon photonics, PA/ROOT-HZ, GAIN TIA, NOISE, BANDWIDTH
Downloads
-
8764 acc.pdf
- full text (Accepted manuscript)
- |
- open access
- |
- |
- 17.63 MB
-
(...).pdf
- full text (Published version)
- |
- UGent only
- |
- |
- 10.26 MB
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-01JV9FJHCEXC24NN3FZWDVG44T
- MLA
- Declercq, Jakob, et al. “A 64-GHz Optical Receiver for 128-GBd Links Using a 55-Nm SiGe BiCMOS Traveling-Wave Linear Transimpedance Amplifier.” JOURNAL OF LIGHTWAVE TECHNOLOGY, vol. 43, no. 9, 2025, pp. 4139–48, doi:10.1109/JLT.2025.3533200.
- APA
- Declercq, J., Moeneclaey, B., Lambrecht, J., Bruynsteen, C., Singh, N., Niu, S., … Yin, X. (2025). A 64-GHz optical receiver for 128-GBd links using a 55-nm SiGe BiCMOS traveling-wave linear transimpedance amplifier. JOURNAL OF LIGHTWAVE TECHNOLOGY, 43(9), 4139–4148. https://doi.org/10.1109/JLT.2025.3533200
- Chicago author-date
- Declercq, Jakob, Bart Moeneclaey, Joris Lambrecht, Cédric Bruynsteen, Nishant Singh, Shengpu Niu, Peter Ossieur, and Xin Yin. 2025. “A 64-GHz Optical Receiver for 128-GBd Links Using a 55-Nm SiGe BiCMOS Traveling-Wave Linear Transimpedance Amplifier.” JOURNAL OF LIGHTWAVE TECHNOLOGY 43 (9): 4139–48. https://doi.org/10.1109/JLT.2025.3533200.
- Chicago author-date (all authors)
- Declercq, Jakob, Bart Moeneclaey, Joris Lambrecht, Cédric Bruynsteen, Nishant Singh, Shengpu Niu, Peter Ossieur, and Xin Yin. 2025. “A 64-GHz Optical Receiver for 128-GBd Links Using a 55-Nm SiGe BiCMOS Traveling-Wave Linear Transimpedance Amplifier.” JOURNAL OF LIGHTWAVE TECHNOLOGY 43 (9): 4139–4148. doi:10.1109/JLT.2025.3533200.
- Vancouver
- 1.Declercq J, Moeneclaey B, Lambrecht J, Bruynsteen C, Singh N, Niu S, et al. A 64-GHz optical receiver for 128-GBd links using a 55-nm SiGe BiCMOS traveling-wave linear transimpedance amplifier. JOURNAL OF LIGHTWAVE TECHNOLOGY. 2025;43(9):4139–48.
- IEEE
- [1]J. Declercq et al., “A 64-GHz optical receiver for 128-GBd links using a 55-nm SiGe BiCMOS traveling-wave linear transimpedance amplifier,” JOURNAL OF LIGHTWAVE TECHNOLOGY, vol. 43, no. 9, pp. 4139–4148, 2025.
@article{01JV9FJHCEXC24NN3FZWDVG44T,
abstract = {{We present an optical receiver using a SiGe BiCMOS transimpedance amplifier (TIA) chip with a 3 dB bandwidth over 67 GHz and a transimpedance gain up to 77 dB$\Omega$. This TIA consists of a single-ended input stage and two differential gain stages followed by a differential output stage. These traveling-wave stages feature variable gain and peaking. A TIA channel consumes 487.5 mW, or 2.2 pJ/bit operating at 112 GBd PAM-4, and occupies a chip area of 1.125 mm(2). The THD at 1 GHz (10 GHz) is kept below 2% (5%) for input swings up to 1.6 mApp (1.3 mApp) by reducing the gain. After wire bonding the input of this TIA to a silicon photonic germanium photodiode, a bandwidth of 64 GHz and a group delay variation of 20.3 ps are obtained. Using a 10-tap feedforward equalizer (FFE), opto-electrical eye diagrams are captured and for 128 GBd NRZ, a sensitivity of -5.9 dBm is measured at a bit error rate (BER) of 1E-12. For 112 GBd PAM4, the KP4 sensitivity level is -4.8 dBm. The input-referred noise is measured at 18.8pA/root Hz}},
author = {{Declercq, Jakob and Moeneclaey, Bart and Lambrecht, Joris and Bruynsteen, Cédric and Singh, Nishant and Niu, Shengpu and Ossieur, Peter and Yin, Xin}},
issn = {{0733-8724}},
journal = {{JOURNAL OF LIGHTWAVE TECHNOLOGY}},
keywords = {{Photodiodes,Integrated circuit modeling,Bandwidth,Transistors,Topology,Impedance,BiCMOS integrated circuits,Gain,Semiconductor device measurement,Wire,broadband amplifiers,distributed amplifiers,high-speed electronics,optical receivers,photodiodes,silicon photonics,PA/ROOT-HZ,GAIN TIA,NOISE,BANDWIDTH}},
language = {{eng}},
number = {{9}},
pages = {{4139--4148}},
title = {{A 64-GHz optical receiver for 128-GBd links using a 55-nm SiGe BiCMOS traveling-wave linear transimpedance amplifier}},
url = {{http://doi.org/10.1109/JLT.2025.3533200}},
volume = {{43}},
year = {{2025}},
}
- Altmetric
- View in Altmetric
- Web of Science
- Times cited: