Inline X-ray metrology for Complementary Field-Effect Transistors (CFET)
- Author
- Janusz Bogdanowicz, Andrea Mingardi, Vincent Brissonneau, Roger Loo (UGent) , Yosuke Shimura, Anjani Akula, Pallavi P. Gowda, Daisy Zhou, Naoto Horiguchi, Serge Biesemans, Markus Kuhn, Satoshi Murakami, Yoshiyasu Ito, Akifusa Higuchi, Philippe Leray and Anne-Laure Charley
- Organization
- Abstract
- This paper demonstrates the relevance of X-rays for inline metrology and process control of complementary field-effect transistors (CFET). After briefly reviewing the stringent metrology needs of CFET, we focus on the starting epitaxial SiGe/Si multilayer and demonstrate that inline X-ray diffraction (XRD) allows the accurate measurement of every individual thickness and composition of this complex stack. Further, we compare to the performance of inline X-ray reflectivity (XRR), which beyond providing individual thicknesses in angstrom-level agreement with XRD also gives access to elusive information about the roughness of the SiGe/Si interface. Moving along the integration flow, we explore the profiling capabilities of inline grazing-incidence small-angle X-ray scattering (GI-SAXS) after inner spacer lateral recess through simulation and preliminary experiments. As we demonstrate, GI-SAXS provides independent information about width, height and inner spacer cavity depth but would necessitate deeper probing depths and smaller beam footprint to enable CFET metrology. Moving to incident energies lower than the currently used Cu K alpha might solve this issue.
- Keywords
- CFET, gate-all-around, 3D metrology, X-Ray Reflectivity, X-Ray Diffraction, X-Ray Fluorescence, Small-Angle X-ray Scattering
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-01JSY7PXJP92QB88RSB77G0V60
- MLA
- Bogdanowicz, Janusz, et al. “Inline X-Ray Metrology for Complementary Field-Effect Transistors (CFET).” METROLOGY, INSPECTION, AND PROCESS CONTROL XXXIX, edited by Matthew J. Sendelbach and Nivea G. Schuch, vol. 13426, SPIE, 2025, doi:10.1117/12.3050810.
- APA
- Bogdanowicz, J., Mingardi, A., Brissonneau, V., Loo, R., Shimura, Y., Akula, A., … Charley, A.-L. (2025). Inline X-ray metrology for Complementary Field-Effect Transistors (CFET). In M. J. Sendelbach & N. G. Schuch (Eds.), METROLOGY, INSPECTION, AND PROCESS CONTROL XXXIX (Vol. 13426). https://doi.org/10.1117/12.3050810
- Chicago author-date
- Bogdanowicz, Janusz, Andrea Mingardi, Vincent Brissonneau, Roger Loo, Yosuke Shimura, Anjani Akula, Pallavi P. Gowda, et al. 2025. “Inline X-Ray Metrology for Complementary Field-Effect Transistors (CFET).” In METROLOGY, INSPECTION, AND PROCESS CONTROL XXXIX, edited by Matthew J. Sendelbach and Nivea G. Schuch. Vol. 13426. SPIE. https://doi.org/10.1117/12.3050810.
- Chicago author-date (all authors)
- Bogdanowicz, Janusz, Andrea Mingardi, Vincent Brissonneau, Roger Loo, Yosuke Shimura, Anjani Akula, Pallavi P. Gowda, Daisy Zhou, Naoto Horiguchi, Serge Biesemans, Markus Kuhn, Satoshi Murakami, Yoshiyasu Ito, Akifusa Higuchi, Philippe Leray, and Anne-Laure Charley. 2025. “Inline X-Ray Metrology for Complementary Field-Effect Transistors (CFET).” In METROLOGY, INSPECTION, AND PROCESS CONTROL XXXIX, ed by. Matthew J. Sendelbach and Nivea G. Schuch. Vol. 13426. SPIE. doi:10.1117/12.3050810.
- Vancouver
- 1.Bogdanowicz J, Mingardi A, Brissonneau V, Loo R, Shimura Y, Akula A, et al. Inline X-ray metrology for Complementary Field-Effect Transistors (CFET). In: Sendelbach MJ, Schuch NG, editors. METROLOGY, INSPECTION, AND PROCESS CONTROL XXXIX. SPIE; 2025.
- IEEE
- [1]J. Bogdanowicz et al., “Inline X-ray metrology for Complementary Field-Effect Transistors (CFET),” in METROLOGY, INSPECTION, AND PROCESS CONTROL XXXIX, San Jose, CA, 2025, vol. 13426.
@inproceedings{01JSY7PXJP92QB88RSB77G0V60,
abstract = {{This paper demonstrates the relevance of X-rays for inline metrology and process control of complementary field-effect transistors (CFET). After briefly reviewing the stringent metrology needs of CFET, we focus on the starting epitaxial SiGe/Si multilayer and demonstrate that inline X-ray diffraction (XRD) allows the accurate measurement of every individual thickness and composition of this complex stack. Further, we compare to the performance of inline X-ray reflectivity (XRR), which beyond providing individual thicknesses in angstrom-level agreement with XRD also gives access to elusive information about the roughness of the SiGe/Si interface. Moving along the integration flow, we explore the profiling capabilities of inline grazing-incidence small-angle X-ray scattering (GI-SAXS) after inner spacer lateral recess through simulation and preliminary experiments. As we demonstrate, GI-SAXS provides independent information about width, height and inner spacer cavity depth but would necessitate deeper probing depths and smaller beam footprint to enable CFET metrology. Moving to incident energies lower than the currently used Cu K alpha might solve this issue.}},
articleno = {{134261G}},
author = {{Bogdanowicz, Janusz and Mingardi, Andrea and Brissonneau, Vincent and Loo, Roger and Shimura, Yosuke and Akula, Anjani and Gowda, Pallavi P. and Zhou, Daisy and Horiguchi, Naoto and Biesemans, Serge and Kuhn, Markus and Murakami, Satoshi and Ito, Yoshiyasu and Higuchi, Akifusa and Leray, Philippe and Charley, Anne-Laure}},
booktitle = {{METROLOGY, INSPECTION, AND PROCESS CONTROL XXXIX}},
editor = {{Sendelbach, Matthew J. and Schuch, Nivea G.}},
isbn = {{9781510686380}},
issn = {{0277-786X}},
keywords = {{CFET,gate-all-around,3D metrology,X-Ray Reflectivity,X-Ray Diffraction,X-Ray Fluorescence,Small-Angle X-ray Scattering}},
language = {{eng}},
location = {{San Jose, CA}},
pages = {{7}},
publisher = {{SPIE}},
title = {{Inline X-ray metrology for Complementary Field-Effect Transistors (CFET)}},
url = {{http://doi.org/10.1117/12.3050810}},
volume = {{13426}},
year = {{2025}},
}
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