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Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot

(2025)
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Abstract
Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly used as its the readout timescale is far shorter than the spin decoherence time. In this work, we experimentally demonstrate a transmission-based RF-SET using a multi-module semiconductor-superconductor assembly. A monolithically integrated SET placed next to a double quantum dot in a Si/SiGe heterostructure is wire-bonded to a superconducting niobium inductor forming the impedance-transforming network. Compared to RF reflectometry, the proposed set-up is experimentally simpler without the need for directional couplers. Read-out performance is benchmarked by the signal-to-noise (SNR) of a dot-reservoir transition (DRT) and an interdot charge transition (ICT) in the double quantum dot near the SET as a function of RF power and integration time. The minimum integration time for unitary SNR is found to be 100 ns for ICT and 300 ns for DRT. The obtained minimum integration times are comparable to the state of the art in conventional RF reflectometry set-ups. Furthermore, we study the turn-on properties of the RF-SET to investigate capacitive shifts and RF losses. Understanding these effects are crucial for further optimisations of the impedance transforming network as well as the device design to assist RF read-out. This new RF read-out scheme also shows promise for multiplexing spin-qubit readout and further studies on rapid charge dynamics in quantum dots.

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MLA
Fattal, I., et al. Radio Frequency Single Electron Transmission Spectroscopy of a  Semiconductor Si/SiGe Quantum Dot. 2025.
APA
Fattal, I., Van Damme, J., Raes, B., Godfrin, C., Jaliel, G., Chen, K., … De Greve, K. (2025). Radio frequency single electron transmission spectroscopy of a  semiconductor Si/SiGe quantum dot.
Chicago author-date
Fattal, I., J. Van Damme, B. Raes, C. Godfrin, G. Jaliel, K. Chen, T. Van Caekenberghe, et al. 2025. “Radio Frequency Single Electron Transmission Spectroscopy of a  Semiconductor Si/SiGe Quantum Dot.”
Chicago author-date (all authors)
Fattal, I., J. Van Damme, B. Raes, C. Godfrin, G. Jaliel, K. Chen, T. Van Caekenberghe, A. Loenders, S. Kubicek, S. Massar, Y. Canvel, J. Jussot, Y. Shimura, Roger Loo, D. Wan, M. Mongillo, and K. De Greve. 2025. “Radio Frequency Single Electron Transmission Spectroscopy of a  Semiconductor Si/SiGe Quantum Dot.”
Vancouver
1.
Fattal I, Van Damme J, Raes B, Godfrin C, Jaliel G, Chen K, et al. Radio frequency single electron transmission spectroscopy of a  semiconductor Si/SiGe quantum dot. 2025.
IEEE
[1]
I. Fattal et al., “Radio frequency single electron transmission spectroscopy of a  semiconductor Si/SiGe quantum dot.” 2025.
@misc{01JSEPB1DC1GVZ56XHN1KTP2JQ,
  abstract     = {{Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly used as its the readout timescale is far shorter than the spin decoherence time. In this work, we experimentally demonstrate a transmission-based RF-SET using a multi-module semiconductor-superconductor assembly. A monolithically integrated SET placed next to a double quantum dot in a Si/SiGe heterostructure is wire-bonded to a superconducting niobium inductor forming the impedance-transforming network. Compared to RF reflectometry, the proposed set-up is experimentally simpler without the need for directional couplers. Read-out performance is benchmarked by the signal-to-noise (SNR) of a dot-reservoir transition (DRT) and an interdot charge transition (ICT) in the double quantum dot near the SET as a function of RF power and integration time. The minimum integration time for unitary SNR is found to be 100 ns for ICT and 300 ns for DRT. The obtained minimum integration times are comparable to the state of the art in conventional RF reflectometry set-ups. Furthermore, we study the turn-on properties of the RF-SET to investigate capacitive shifts and RF losses. Understanding these effects are crucial for further optimisations of the impedance transforming network as well as the device design to assist RF read-out. This new RF read-out scheme also shows promise for multiplexing spin-qubit readout and further studies on rapid charge dynamics in quantum dots.}},
  author       = {{Fattal, I. and Van Damme, J. and Raes, B. and Godfrin, C. and Jaliel, G. and Chen, K. and Van Caekenberghe, T. and Loenders, A. and Kubicek, S. and Massar, S. and Canvel, Y. and Jussot, J. and Shimura, Y. and Loo, Roger and Wan, D. and Mongillo, M. and De Greve, K.}},
  language     = {{eng}},
  pages        = {{17}},
  title        = {{Radio frequency single electron transmission spectroscopy of a  semiconductor Si/SiGe quantum dot}},
  url          = {{https://arxiv.org/abs/2504.05016}},
  year         = {{2025}},
}