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A pathway for the integration of novel ferroelectric thin films on non-planar photonic integrated circuits

Enes Lievens (UGent) , Kobe De Geest (UGent) , Ewout Picavet (UGent) , Liesbet Van Landschoot (UGent) , Henk Vrielinck (UGent) , Gilles Freddy Feutmba (UGent) , Hannes Rijckaert (UGent) , Klaartje De Buysser (UGent) , Dries Van Thourhout (UGent) , Peter Bienstman (UGent) , et al.
(2025) MICROMACHINES. 16(3).
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Abstract
The heterogeneous integration of ferroelectric thin films on silicon- or silicon nitride-based platforms for photonic integrated circuits plays a crucial role in the development of nanophotonic thin film modulators. For this purpose, an ultrathin seed film was recently introduced as an integration method for ferroelectric thin films such as BaTiO3 and Pb(Zr,Ti)O3. One issue with this self-orienting seed film is that for non-planarized circuits, it fails to act as a template film for the thin films. To circumvent this problem, we propose a method of planarization without the need for wafer-scale chemical mechanical polishing by using hydrogen silsesquioxane as a precursor to forming amorphous silica, in order to create an oxide cladding similar to the thermal oxide often present on silicon-based platforms. Additionally, this oxide cladding is compatible with the high annealing temperatures usually required for the deposition of these novel ferroelectric thin films (600–800 °C). The thickness of this silica film can be controlled through a dry etch process, giving rise to a versatile platform for integrating nanophotonic thin film modulators on a wider variety of substrates. Using this method, we successfully demonstrate a hybrid BaTiO3-Si ring modulator with a high Pockels coefficient of rwg=155.57±10.91 pm V−1 and a half-wave voltage-length product of VπL=2.638±0.084 V cm, confirming the integration of ferroelectric thin films on an initially non-planar substrate.

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Citation

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MLA
Lievens, Enes, et al. “A Pathway for the Integration of Novel Ferroelectric Thin Films on Non-Planar Photonic Integrated Circuits.” MICROMACHINES, vol. 16, no. 3, 2025, doi:10.3390/mi16030334.
APA
Lievens, E., De Geest, K., Picavet, E., Van Landschoot, L., Vrielinck, H., Feutmba, G. F., … Beeckman, J. (2025). A pathway for the integration of novel ferroelectric thin films on non-planar photonic integrated circuits. MICROMACHINES, 16(3). https://doi.org/10.3390/mi16030334
Chicago author-date
Lievens, Enes, Kobe De Geest, Ewout Picavet, Liesbet Van Landschoot, Henk Vrielinck, Gilles Freddy Feutmba, Hannes Rijckaert, et al. 2025. “A Pathway for the Integration of Novel Ferroelectric Thin Films on Non-Planar Photonic Integrated Circuits.” MICROMACHINES 16 (3). https://doi.org/10.3390/mi16030334.
Chicago author-date (all authors)
Lievens, Enes, Kobe De Geest, Ewout Picavet, Liesbet Van Landschoot, Henk Vrielinck, Gilles Freddy Feutmba, Hannes Rijckaert, Klaartje De Buysser, Dries Van Thourhout, Peter Bienstman, and Jeroen Beeckman. 2025. “A Pathway for the Integration of Novel Ferroelectric Thin Films on Non-Planar Photonic Integrated Circuits.” MICROMACHINES 16 (3). doi:10.3390/mi16030334.
Vancouver
1.
Lievens E, De Geest K, Picavet E, Van Landschoot L, Vrielinck H, Feutmba GF, et al. A pathway for the integration of novel ferroelectric thin films on non-planar photonic integrated circuits. MICROMACHINES. 2025;16(3).
IEEE
[1]
E. Lievens et al., “A pathway for the integration of novel ferroelectric thin films on non-planar photonic integrated circuits,” MICROMACHINES, vol. 16, no. 3, 2025.
@article{01JPHWBM5NYPQWZXSZMR0TA3C0,
  abstract     = {{The heterogeneous integration of ferroelectric thin films on silicon- or silicon nitride-based platforms for photonic integrated circuits plays a crucial role in the development of nanophotonic thin film modulators. For this purpose, an ultrathin seed film was recently introduced as an integration method for ferroelectric thin films such as BaTiO3 and Pb(Zr,Ti)O3. One issue with this self-orienting seed film is that for non-planarized circuits, it fails to act as a template film for the thin films. To circumvent this problem, we propose a method of planarization without the need for wafer-scale chemical mechanical polishing by using hydrogen silsesquioxane as a precursor to forming amorphous silica, in order to create an oxide cladding similar to the thermal oxide often present on silicon-based platforms. Additionally, this oxide cladding is compatible with the high annealing temperatures usually required for the deposition of these novel ferroelectric thin films (600–800 °C). The thickness of this silica film can be controlled through a dry etch process, giving rise to a versatile platform for integrating nanophotonic thin film modulators on a wider variety of substrates. Using this method, we successfully demonstrate a hybrid BaTiO3-Si ring modulator with a high Pockels coefficient of rwg=155.57±10.91 pm V−1 and a half-wave voltage-length product of VπL=2.638±0.084 V cm, confirming the integration of ferroelectric thin films on an initially non-planar substrate.}},
  articleno    = {{334}},
  author       = {{Lievens, Enes and De Geest, Kobe and Picavet, Ewout and Van Landschoot, Liesbet and Vrielinck, Henk and Feutmba, Gilles Freddy and Rijckaert, Hannes and De Buysser, Klaartje and Van Thourhout, Dries and Bienstman, Peter and Beeckman, Jeroen}},
  issn         = {{2072-666X}},
  journal      = {{MICROMACHINES}},
  language     = {{eng}},
  number       = {{3}},
  pages        = {{11}},
  title        = {{A pathway for the integration of novel ferroelectric thin films on non-planar photonic integrated circuits}},
  url          = {{http://doi.org/10.3390/mi16030334}},
  volume       = {{16}},
  year         = {{2025}},
}
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