Heterogeneous integration of GaInAsSb-GaSb photodiodes on SOI photonic integrated circuits for SWIR applications
- Author
- Xin Guo (UGent) , Laurent Cerutti, Jean-batiste Rodriguez, Eric Tournie, Sarah Uvin (UGent) and Günther Roelkens (UGent)
- Organization
- Abstract
- We demonstrate the heterogeneous integration of GaInAsSb-GaSb photodiodes on 220 nm SOI photonic integrated circuits (PICs) using the micro-transfer-printing (mu TP) technology, for operation in the short-wave infrared (SWIR) wavelength region. Utilizing an evanescent coupling scheme between a silicon waveguide and a III-V structure, the device exhibits a room temperature responsivity of 1.23 and 1.25 A/W at 2.3 and 2.45 mu m, respectively. This enables the realization of photonic integrated circuits for SWIR applications. (c) 2024 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.
- Keywords
- I-N PHOTODIODES, SILICON, PHOTODETECTORS
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Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-01JK8PM98SX1BE2ARWS478B2QW
- MLA
- Guo, Xin, et al. “Heterogeneous Integration of GaInAsSb-GaSb Photodiodes on SOI Photonic Integrated Circuits for SWIR Applications.” OPTICS LETTERS, vol. 50, no. 1, 2025, pp. 89–92, doi:10.1364/OL.543948.
- APA
- Guo, X., Cerutti, L., Rodriguez, J., Tournie, E., Uvin, S., & Roelkens, G. (2025). Heterogeneous integration of GaInAsSb-GaSb photodiodes on SOI photonic integrated circuits for SWIR applications. OPTICS LETTERS, 50(1), 89–92. https://doi.org/10.1364/OL.543948
- Chicago author-date
- Guo, Xin, Laurent Cerutti, Jean-batiste Rodriguez, Eric Tournie, Sarah Uvin, and Günther Roelkens. 2025. “Heterogeneous Integration of GaInAsSb-GaSb Photodiodes on SOI Photonic Integrated Circuits for SWIR Applications.” OPTICS LETTERS 50 (1): 89–92. https://doi.org/10.1364/OL.543948.
- Chicago author-date (all authors)
- Guo, Xin, Laurent Cerutti, Jean-batiste Rodriguez, Eric Tournie, Sarah Uvin, and Günther Roelkens. 2025. “Heterogeneous Integration of GaInAsSb-GaSb Photodiodes on SOI Photonic Integrated Circuits for SWIR Applications.” OPTICS LETTERS 50 (1): 89–92. doi:10.1364/OL.543948.
- Vancouver
- 1.Guo X, Cerutti L, Rodriguez J, Tournie E, Uvin S, Roelkens G. Heterogeneous integration of GaInAsSb-GaSb photodiodes on SOI photonic integrated circuits for SWIR applications. OPTICS LETTERS. 2025;50(1):89–92.
- IEEE
- [1]X. Guo, L. Cerutti, J. Rodriguez, E. Tournie, S. Uvin, and G. Roelkens, “Heterogeneous integration of GaInAsSb-GaSb photodiodes on SOI photonic integrated circuits for SWIR applications,” OPTICS LETTERS, vol. 50, no. 1, pp. 89–92, 2025.
@article{01JK8PM98SX1BE2ARWS478B2QW,
abstract = {{We demonstrate the heterogeneous integration of GaInAsSb-GaSb photodiodes on 220 nm SOI photonic integrated circuits (PICs) using the micro-transfer-printing (mu TP) technology, for operation in the short-wave infrared (SWIR) wavelength region. Utilizing an evanescent coupling scheme between a silicon waveguide and a III-V structure, the device exhibits a room temperature responsivity of 1.23 and 1.25 A/W at 2.3 and 2.45 mu m, respectively. This enables the realization of photonic integrated circuits for SWIR applications. (c) 2024 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.}},
author = {{Guo, Xin and Cerutti, Laurent and Rodriguez, Jean-batiste and Tournie, Eric and Uvin, Sarah and Roelkens, Günther}},
issn = {{0146-9592}},
journal = {{OPTICS LETTERS}},
keywords = {{I-N PHOTODIODES,SILICON,PHOTODETECTORS}},
language = {{eng}},
number = {{1}},
pages = {{89--92}},
title = {{Heterogeneous integration of GaInAsSb-GaSb photodiodes on SOI photonic integrated circuits for SWIR applications}},
url = {{http://doi.org/10.1364/OL.543948}},
volume = {{50}},
year = {{2025}},
}
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