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Complementary Field-Effect Transistors (CFET) : metrology challenges and solutions

J. Bogdanowicz, A.-L. Charley, M. Saib, M. Beggiato, G. Lorusso, V. Brissonneau, E. Dupuy, Roger Loo (UGent) , Y. Shimura, A. Akula, et al.
(2024) International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN 2024), Abstracts.
Author
Organization
Keywords
CFET, gate all around, 3D metrology

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Citation

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MLA
Bogdanowicz, J., et al. “Complementary Field-Effect Transistors (CFET) : Metrology Challenges and Solutions.” International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN 2024), Abstracts, 2024.
APA
Bogdanowicz, J., Charley, A.-L., Saib, M., Beggiato, M., Lorusso, G., Brissonneau, V., … Ciesielski, R. (2024). Complementary Field-Effect Transistors (CFET) : metrology challenges and solutions. International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN 2024), Abstracts. Presented at the International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN 2024), Monterey, CA, USA.
Chicago author-date
Bogdanowicz, J., A.-L. Charley, M. Saib, M. Beggiato, G. Lorusso, V. Brissonneau, E. Dupuy, et al. 2024. “Complementary Field-Effect Transistors (CFET) : Metrology Challenges and Solutions.” In International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN 2024), Abstracts.
Chicago author-date (all authors)
Bogdanowicz, J., A.-L. Charley, M. Saib, M. Beggiato, G. Lorusso, V. Brissonneau, E. Dupuy, Roger Loo, Y. Shimura, A. Akula, H. Arimura, BT Chan, D. Zhou, N. Horiguchi, S. Biesmans, P. Leray, J. Hung, I. Turovets, S. Wei, P. Hönicke, and R. Ciesielski. 2024. “Complementary Field-Effect Transistors (CFET) : Metrology Challenges and Solutions.” In International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN 2024), Abstracts.
Vancouver
1.
Bogdanowicz J, Charley A-L, Saib M, Beggiato M, Lorusso G, Brissonneau V, et al. Complementary Field-Effect Transistors (CFET) : metrology challenges and solutions. In: International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN 2024), Abstracts. 2024.
IEEE
[1]
J. Bogdanowicz et al., “Complementary Field-Effect Transistors (CFET) : metrology challenges and solutions,” in International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN 2024), Abstracts, Monterey, CA, USA, 2024.
@inproceedings{01JJ799DG0BG9M0JS0J0MQ47WD,
  articleno    = {{002}},
  author       = {{Bogdanowicz, J. and Charley, A.-L. and Saib, M. and Beggiato, M. and Lorusso, G. and Brissonneau, V. and Dupuy, E. and Loo, Roger and Shimura, Y. and Akula, A. and Arimura, H. and Chan, BT and Zhou, D. and Horiguchi, N. and Biesmans, S. and Leray, P. and Hung, J. and Turovets, I. and Wei, S. and Hönicke, P. and Ciesielski, R.}},
  booktitle    = {{International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN 2024), Abstracts}},
  keywords     = {{CFET,gate all around,3D metrology}},
  language     = {{eng}},
  location     = {{Monterey, CA, USA}},
  pages        = {{3}},
  title        = {{Complementary Field-Effect Transistors (CFET) : metrology challenges and solutions}},
  url          = {{https://fcmn2024.avs.org/schedule/}},
  year         = {{2024}},
}