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64 Gb/s O-band GeSi quantum-confined stark effect electro-absorption modulators integrated in a 300mm silicon photonics platform

Ahmed Kandeel (UGent) , Gaspard Hiblot, Clement Porret, Srinivasan Ashwyn Srinivasan, Yosuke Shimura, Roger Loo (UGent) , Mathias Berciano, Chih-Kuo Neil Tseng, Dharmander Malik, Alexey Milenin, et al.
(2024) JOURNAL OF LIGHTWAVE TECHNOLOGY.
Author
Organization
Abstract
We report the recent progress of waveguide-coupled O-band GeSi quantum confined stark effect electroabsorption modulators, monolithically integrated in a Si photonics platform on 300 mm Silicon-on-insulator wafers with 220 nm thick Si top layer. A wafer-scale analysis of static insertion loss (IL) and extinction ratio (ER) is presented, showing IL down to 7.5 dB with ER of 5 dB for a 36.8 μm long device, at drive voltages of 2 V peak-to-peak. Modulation bandwidths beyond 50 GHz are demonstrated, with an extracted junction capacitance of 57 fF and series resistance of 8.3 Ω. Finally, open eye diagrams are demonstrated for non-return-to-zero on-off keying (NRZ-OOK) modulation for data rates from 40Gb/s up to 64 Gb/s, with dynamic extinction ratio of 2.5 dB, at 1320 nm wavelength.
Keywords
Silicon photonics, multiple quantum wells, quantum confined stark effect, electroabsorption modulator

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MLA
Kandeel, Ahmed, et al. “64 Gb/s O-Band GeSi Quantum-Confined Stark Effect Electro-Absorption Modulators Integrated in a 300mm Silicon Photonics Platform.” JOURNAL OF LIGHTWAVE TECHNOLOGY, 2024, doi:10.1109/jlt.2024.3505957.
APA
Kandeel, A., Hiblot, G., Porret, C., Srinivasan, S. A., Shimura, Y., Loo, R., … Van Campenhout, J. (2024). 64 Gb/s O-band GeSi quantum-confined stark effect electro-absorption modulators integrated in a 300mm silicon photonics platform. JOURNAL OF LIGHTWAVE TECHNOLOGY. https://doi.org/10.1109/jlt.2024.3505957
Chicago author-date
Kandeel, Ahmed, Gaspard Hiblot, Clement Porret, Srinivasan Ashwyn Srinivasan, Yosuke Shimura, Roger Loo, Mathias Berciano, et al. 2024. “64 Gb/s O-Band GeSi Quantum-Confined Stark Effect Electro-Absorption Modulators Integrated in a 300mm Silicon Photonics Platform.” JOURNAL OF LIGHTWAVE TECHNOLOGY. https://doi.org/10.1109/jlt.2024.3505957.
Chicago author-date (all authors)
Kandeel, Ahmed, Gaspard Hiblot, Clement Porret, Srinivasan Ashwyn Srinivasan, Yosuke Shimura, Roger Loo, Mathias Berciano, Chih-Kuo Neil Tseng, Dharmander Malik, Alexey Milenin, Didit Yudistira, Sadhishkumar Balakrishnan, Amir Khaled Abdelhamid Mohamed Shahin, Javad Rahimi Vaskasi, Peter Verheyen, Marianna Pantouvaki, Maumita Chakrabarti, Dimitrios Velenis, Filippo Ferraro, Yoojin Ban, Dries Van Thourhout, and Joris Van Campenhout. 2024. “64 Gb/s O-Band GeSi Quantum-Confined Stark Effect Electro-Absorption Modulators Integrated in a 300mm Silicon Photonics Platform.” JOURNAL OF LIGHTWAVE TECHNOLOGY. doi:10.1109/jlt.2024.3505957.
Vancouver
1.
Kandeel A, Hiblot G, Porret C, Srinivasan SA, Shimura Y, Loo R, et al. 64 Gb/s O-band GeSi quantum-confined stark effect electro-absorption modulators integrated in a 300mm silicon photonics platform. JOURNAL OF LIGHTWAVE TECHNOLOGY. 2024;
IEEE
[1]
A. Kandeel et al., “64 Gb/s O-band GeSi quantum-confined stark effect electro-absorption modulators integrated in a 300mm silicon photonics platform,” JOURNAL OF LIGHTWAVE TECHNOLOGY, 2024.
@article{01JDPJN4NQZNRWF5HQ8HD3PYN3,
  abstract     = {{We report the recent progress of waveguide-coupled O-band GeSi quantum confined stark effect electroabsorption modulators, monolithically integrated in a Si photonics platform on 300 mm Silicon-on-insulator wafers with 220 nm thick Si top layer. A wafer-scale analysis of static insertion loss (IL) and extinction ratio (ER) is presented, showing IL down to 7.5 dB with ER of 5 dB for a 36.8 μm long device, at drive voltages of 2 V peak-to-peak. Modulation bandwidths beyond 50 GHz are demonstrated, with an extracted junction capacitance of 57 fF and series resistance of 8.3 Ω. Finally, open eye diagrams are demonstrated for non-return-to-zero on-off keying (NRZ-OOK) modulation for data rates from 40Gb/s up to 64 Gb/s, with dynamic extinction ratio of 2.5 dB, at 1320 nm wavelength.}},
  author       = {{Kandeel, Ahmed and Hiblot, Gaspard and Porret, Clement and Srinivasan, Srinivasan Ashwyn and Shimura, Yosuke and Loo, Roger and Berciano, Mathias and Tseng, Chih-Kuo Neil and Malik, Dharmander and Milenin, Alexey and Yudistira, Didit and Balakrishnan, Sadhishkumar and Shahin, Amir Khaled Abdelhamid Mohamed and Vaskasi, Javad Rahimi and Verheyen, Peter and Pantouvaki, Marianna and Chakrabarti, Maumita and Velenis, Dimitrios and Ferraro, Filippo and Ban, Yoojin and Van Thourhout, Dries and Van Campenhout, Joris}},
  issn         = {{0733-8724}},
  journal      = {{JOURNAL OF LIGHTWAVE TECHNOLOGY}},
  keywords     = {{Silicon photonics,multiple quantum wells,quantum confined stark effect,electroabsorption modulator}},
  language     = {{eng}},
  title        = {{64 Gb/s O-band GeSi quantum-confined stark effect electro-absorption modulators integrated in a 300mm silicon photonics platform}},
  url          = {{http://doi.org/10.1109/jlt.2024.3505957}},
  year         = {{2024}},
}
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