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Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode

Wei-Syuan Lin, Benoit Bakeroot (UGent) , Zhen-Hong Huang, Ting-Chun Lo, Matteo Borga, Dirk Wellekens, Niels Posthuma, Stefaan Decoutere and Tian-Li Wu
(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(8). p.4874-4878
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Abstract
In this study, we investigate the reverse conduction diode mode failure mechanism in p-GaN gate high electron mobility transistors (HEMTs) using TCAD simulations and emission microscopy (EMMI). First, we observe a significant increase in gate leakage current when V-DS is swept to -15 V while V-GS = 0 V, indicating gate breakdown occurring with sufficient negative bias. Second, TCAD simulations are conducted to gain further insight into the failure locations and mechanisms. The simulations reveal high electric fields in the Schottky junction close to the interface between the metal and the p-GaN. This finding suggests that the gate region is likely the location leading to increased gate current and breakdown during the reverse conducting operation of the p-GaN gate HEMT. Lastly, EMMI measurements are performed on a device exhibiting high gate leakage current during reverse conduction diode mode operation. The EMMI results show bright spots in the gate region, which align with the failure location identified by the TCAD simulations. These results emphasize the importance of optimizing the Schottky/p-GaN junction to enhance the robustness of the p-GaN gate HEMT under reverse conduction diode mode operation.
Keywords
Failure, p-GaN high electron mobility transistors (HEMTs), reverse conduction diode mode

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MLA
Lin, Wei-Syuan, et al. “Toward Understanding the Failure Mechanism in P-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode.” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 71, no. 8, 2024, pp. 4874–78, doi:10.1109/TED.2024.3412095.
APA
Lin, W.-S., Bakeroot, B., Huang, Z.-H., Lo, T.-C., Borga, M., Wellekens, D., … Wu, T.-L. (2024). Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode. IEEE TRANSACTIONS ON ELECTRON DEVICES, 71(8), 4874–4878. https://doi.org/10.1109/TED.2024.3412095
Chicago author-date
Lin, Wei-Syuan, Benoit Bakeroot, Zhen-Hong Huang, Ting-Chun Lo, Matteo Borga, Dirk Wellekens, Niels Posthuma, Stefaan Decoutere, and Tian-Li Wu. 2024. “Toward Understanding the Failure Mechanism in P-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode.” IEEE TRANSACTIONS ON ELECTRON DEVICES 71 (8): 4874–78. https://doi.org/10.1109/TED.2024.3412095.
Chicago author-date (all authors)
Lin, Wei-Syuan, Benoit Bakeroot, Zhen-Hong Huang, Ting-Chun Lo, Matteo Borga, Dirk Wellekens, Niels Posthuma, Stefaan Decoutere, and Tian-Li Wu. 2024. “Toward Understanding the Failure Mechanism in P-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode.” IEEE TRANSACTIONS ON ELECTRON DEVICES 71 (8): 4874–4878. doi:10.1109/TED.2024.3412095.
Vancouver
1.
Lin W-S, Bakeroot B, Huang Z-H, Lo T-C, Borga M, Wellekens D, et al. Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2024;71(8):4874–8.
IEEE
[1]
W.-S. Lin et al., “Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 71, no. 8, pp. 4874–4878, 2024.
@article{01JD55KQR23BND1QH5FWMHB85X,
  abstract     = {{In this study, we investigate the reverse conduction diode mode failure mechanism in p-GaN gate high electron mobility transistors (HEMTs) using TCAD simulations and emission microscopy (EMMI). First, we observe a significant increase in gate leakage current when V-DS is swept to -15 V while V-GS = 0 V, indicating gate breakdown occurring with sufficient negative bias. Second, TCAD simulations are conducted to gain further insight into the failure locations and mechanisms. The simulations reveal high electric fields in the Schottky junction close to the interface between the metal and the p-GaN. This finding suggests that the gate region is likely the location leading to increased gate current and breakdown during the reverse conducting operation of the p-GaN gate HEMT. Lastly, EMMI measurements are performed on a device exhibiting high gate leakage current during reverse conduction diode mode operation. The EMMI results show bright spots in the gate region, which align with the failure location identified by the TCAD simulations. These results emphasize the importance of optimizing the Schottky/p-GaN junction to enhance the robustness of the p-GaN gate HEMT under reverse conduction diode mode operation.}},
  author       = {{Lin, Wei-Syuan and Bakeroot, Benoit and Huang, Zhen-Hong and Lo, Ting-Chun and Borga, Matteo and Wellekens, Dirk and Posthuma, Niels and Decoutere, Stefaan and Wu, Tian-Li}},
  issn         = {{0018-9383}},
  journal      = {{IEEE TRANSACTIONS ON ELECTRON DEVICES}},
  keywords     = {{Failure,p-GaN high electron mobility transistors (HEMTs),reverse conduction diode mode}},
  language     = {{eng}},
  number       = {{8}},
  pages        = {{4874--4878}},
  title        = {{Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode}},
  url          = {{http://doi.org/10.1109/TED.2024.3412095}},
  volume       = {{71}},
  year         = {{2024}},
}
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