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Linearity enhancement analysis of breakdown voltage doubler and demonstration in 60 GBd SiGe BiCMOS driver

Kieran De Bruyn (UGent) , Tinus Pannier (UGent) , Jakob Declercq (UGent) , Laurens Breyne, Xin Yin (UGent) , Peter Ossieur (UGent) and Johan Bauwelinck (UGent)
(2024) 2024 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, ISCAS 2024. In IEEE International Symposium on Circuits and Systems
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Abstract
In this paper, we prove theoretically and experimentally the enhanced linearity behaviour of the BVD topology compared to the more well-known cascode topology in terms of THD, 1dBCP and R-LM.We present the nonlinear algebraic analysis and simulations of the topology, along with the measurements of a high-speed, large output swing, linear, four channel optical modulator driver IC using that topology. The realised driver has an electrical 3 dB-bandwidth of 30GHz and a differential output swing of 2.5 Vppd with a power consumption of 480mW per channel. It achieves an R-LM of 0.98, THD of < 2% and output referred 1dBCP of 11.4 dBm.
Keywords
Breakdown Voltage Doubler, optical modulator driver, nonlinearity analysis, SiGe BiCMOS, high-speed Integrated Circuits, MODULATOR DRIVER

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MLA
De Bruyn, Kieran, et al. “Linearity Enhancement Analysis of Breakdown Voltage Doubler and Demonstration in 60 GBd SiGe BiCMOS Driver.” 2024 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, ISCAS 2024, IEEE, 2024, doi:10.1109/iscas58744.2024.10558547.
APA
De Bruyn, K., Pannier, T., Declercq, J., Breyne, L., Yin, X., Ossieur, P., & Bauwelinck, J. (2024). Linearity enhancement analysis of breakdown voltage doubler and demonstration in 60 GBd SiGe BiCMOS driver. 2024 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, ISCAS 2024. Presented at the IEEE International Symposium on Circuits and Systems (ISCAS 2024), Singapore. https://doi.org/10.1109/iscas58744.2024.10558547
Chicago author-date
De Bruyn, Kieran, Tinus Pannier, Jakob Declercq, Laurens Breyne, Xin Yin, Peter Ossieur, and Johan Bauwelinck. 2024. “Linearity Enhancement Analysis of Breakdown Voltage Doubler and Demonstration in 60 GBd SiGe BiCMOS Driver.” In 2024 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, ISCAS 2024. IEEE. https://doi.org/10.1109/iscas58744.2024.10558547.
Chicago author-date (all authors)
De Bruyn, Kieran, Tinus Pannier, Jakob Declercq, Laurens Breyne, Xin Yin, Peter Ossieur, and Johan Bauwelinck. 2024. “Linearity Enhancement Analysis of Breakdown Voltage Doubler and Demonstration in 60 GBd SiGe BiCMOS Driver.” In 2024 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, ISCAS 2024. IEEE. doi:10.1109/iscas58744.2024.10558547.
Vancouver
1.
De Bruyn K, Pannier T, Declercq J, Breyne L, Yin X, Ossieur P, et al. Linearity enhancement analysis of breakdown voltage doubler and demonstration in 60 GBd SiGe BiCMOS driver. In: 2024 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, ISCAS 2024. IEEE; 2024.
IEEE
[1]
K. De Bruyn et al., “Linearity enhancement analysis of breakdown voltage doubler and demonstration in 60 GBd SiGe BiCMOS driver,” in 2024 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, ISCAS 2024, Singapore, 2024.
@inproceedings{01J2XFHHY2D0T5BKY2EJ9W1PJS,
  abstract     = {{In this paper, we prove theoretically and experimentally the enhanced linearity behaviour of the BVD topology compared to the more well-known cascode topology in terms of THD, 1dBCP and R-LM.We present the nonlinear algebraic analysis and simulations of the topology, along with the measurements of a high-speed, large output swing, linear, four channel optical modulator driver IC using that topology. The realised driver has an electrical 3 dB-bandwidth of 30GHz and a differential output swing of 2.5 Vppd with a power consumption of 480mW per channel. It achieves an R-LM of 0.98, THD of < 2% and output referred 1dBCP of 11.4 dBm.}},
  author       = {{De Bruyn, Kieran and Pannier, Tinus and Declercq, Jakob and Breyne, Laurens and Yin, Xin and Ossieur, Peter and Bauwelinck, Johan}},
  booktitle    = {{2024 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, ISCAS 2024}},
  isbn         = {{9798350331004}},
  issn         = {{0271-4302}},
  keywords     = {{Breakdown Voltage Doubler,optical modulator driver,nonlinearity analysis,SiGe BiCMOS,high-speed Integrated Circuits,MODULATOR DRIVER}},
  language     = {{eng}},
  location     = {{Singapore}},
  pages        = {{5}},
  publisher    = {{IEEE}},
  title        = {{Linearity enhancement analysis of breakdown voltage doubler and demonstration in 60 GBd SiGe BiCMOS driver}},
  url          = {{http://doi.org/10.1109/iscas58744.2024.10558547}},
  year         = {{2024}},
}
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