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Short‐wave infrared colloidal QDs photodetector with nanosecond response times enabled by ultrathin absorber layers

Yuhao Deng (UGent) , Chao Pang (UGent) , Ezat Kheradmand (UGent) , Jari Leemans, Jing Bai (UGent) , Matthias Minjauw (UGent) , Jiayi Liu (UGent) , Korneel Molkens (UGent) , Jeroen Beeckman (UGent) , Christophe Detavernier (UGent) , et al.
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Abstract
Ultrafast short-wavelength infrared (SWIR) photodetection is of great interest for emerging automated vision and spatial mapping technologies. Colloidal quantum dots (QDs) stand out for SWIR photodetection compared to epitaxial (In,Ga)As or (Hg,Cd)Te semiconductors by their combining a size-tunable bandgap and a suitability for cost-effective, solution-based processing. However, achieving ultrafast, nanosecond-level response time has remained an outstanding challenge for QD-based SWIR photodiodes (QDPDs). Here, record 4 ns response time in PbS-based QDPDs that operate at SWIR wavelengths is reported, a result reaching the requirement of SWIR light detection and ranging based on colloidal QDs. These ultrafast QDPDs combine a thin active layer to reduce the carrier transport time and a small area to inhibit slow capacitive discharging. By implementing a concentration gradient ligand exchange method, high-quality p–n junctions are fabricated in these ultrathin QDPDs. Moreover, these ultrathin QDPDs attain an external quantum efficiency of 42% at 1330 nm, due to a 2.5-fold enhanced light absorption through the formation of a Fabry–Perot cavity within the QDPD and the highly efficient extraction (98%) of photogenerated charge carriers. Based on these results, it is estimated that a further increase of the charge-carrier mobility can lead to PbS QDPDs with sub-nanosecond response time.
Keywords
short-wave infrared, colloidal quantum dots, ultrafast, photodetector

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Citation

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MLA
Deng, Yuhao, et al. “Short‐wave Infrared Colloidal QDs Photodetector with Nanosecond Response Times Enabled by Ultrathin Absorber Layers.” ADVANCED MATERIALS, vol. 36, no. 28, 2024, doi:10.1002/adma.202402002.
APA
Deng, Y., Pang, C., Kheradmand, E., Leemans, J., Bai, J., Minjauw, M., … Hens, Z. (2024). Short‐wave infrared colloidal QDs photodetector with nanosecond response times enabled by ultrathin absorber layers. ADVANCED MATERIALS, 36(28). https://doi.org/10.1002/adma.202402002
Chicago author-date
Deng, Yuhao, Chao Pang, Ezat Kheradmand, Jari Leemans, Jing Bai, Matthias Minjauw, Jiayi Liu, et al. 2024. “Short‐wave Infrared Colloidal QDs Photodetector with Nanosecond Response Times Enabled by Ultrathin Absorber Layers.” ADVANCED MATERIALS 36 (28). https://doi.org/10.1002/adma.202402002.
Chicago author-date (all authors)
Deng, Yuhao, Chao Pang, Ezat Kheradmand, Jari Leemans, Jing Bai, Matthias Minjauw, Jiayi Liu, Korneel Molkens, Jeroen Beeckman, Christophe Detavernier, Pieter Geiregat, Dries Van Thourhout, and Zeger Hens. 2024. “Short‐wave Infrared Colloidal QDs Photodetector with Nanosecond Response Times Enabled by Ultrathin Absorber Layers.” ADVANCED MATERIALS 36 (28). doi:10.1002/adma.202402002.
Vancouver
1.
Deng Y, Pang C, Kheradmand E, Leemans J, Bai J, Minjauw M, et al. Short‐wave infrared colloidal QDs photodetector with nanosecond response times enabled by ultrathin absorber layers. ADVANCED MATERIALS. 2024;36(28).
IEEE
[1]
Y. Deng et al., “Short‐wave infrared colloidal QDs photodetector with nanosecond response times enabled by ultrathin absorber layers,” ADVANCED MATERIALS, vol. 36, no. 28, 2024.
@article{01HWCN3HXPGJ7WF7YBBVQ70Y3E,
  abstract     = {{Ultrafast short-wavelength infrared (SWIR) photodetection is of great interest for emerging automated vision and spatial mapping technologies. Colloidal quantum dots (QDs) stand out for SWIR photodetection compared to epitaxial (In,Ga)As or (Hg,Cd)Te semiconductors by their combining a size-tunable bandgap and a suitability for cost-effective, solution-based processing. However, achieving ultrafast, nanosecond-level response time has remained an outstanding challenge for QD-based SWIR photodiodes (QDPDs). Here, record 4 ns response time in PbS-based QDPDs that operate at SWIR wavelengths is reported, a result reaching the requirement of SWIR light detection and ranging based on colloidal QDs. These ultrafast QDPDs combine a thin active layer to reduce the carrier transport time and a small area to inhibit slow capacitive discharging. By implementing a concentration gradient ligand exchange method, high-quality p–n junctions are fabricated in these ultrathin QDPDs. Moreover, these ultrathin QDPDs attain an external quantum efficiency of 42% at 1330 nm, due to a 2.5-fold enhanced light absorption through the formation of a Fabry–Perot cavity within the QDPD and the highly efficient extraction (98%) of photogenerated charge carriers. Based on these results, it is estimated that a further increase of the charge-carrier mobility can lead to PbS QDPDs with sub-nanosecond response time.}},
  articleno    = {{2402002}},
  author       = {{Deng, Yuhao and Pang, Chao and Kheradmand, Ezat and Leemans, Jari and Bai, Jing and Minjauw, Matthias and Liu, Jiayi and Molkens, Korneel and Beeckman, Jeroen and Detavernier, Christophe and Geiregat, Pieter and Van Thourhout, Dries and Hens, Zeger}},
  issn         = {{0935-9648}},
  journal      = {{ADVANCED MATERIALS}},
  keywords     = {{short-wave infrared,colloidal quantum dots,ultrafast,photodetector}},
  language     = {{eng}},
  number       = {{28}},
  pages        = {{8}},
  title        = {{Short‐wave infrared colloidal QDs photodetector with nanosecond response times enabled by ultrathin absorber layers}},
  url          = {{http://doi.org/10.1002/adma.202402002}},
  volume       = {{36}},
  year         = {{2024}},
}

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