Academic Bibliography

 Search 200 years of publications by Ghent University researchers.
Advanced search
1 file | 4.46 MB
Add to list
  1. Search results
  2. Route toward commercially manufactura...

Route toward commercially manufacturable vertical GaN devices

Karen Geens, M. Borga, M. A. Khan, W. Goncalez Filho, A. Vohra, S. Banerjee, K. J. Lee, U. Chatterjee, D. Cingu, Benoit Bakeroot (UGent) , et al.
(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(3). p.1488-1493
Author
Organization
Abstract
To make vertical GaN-based trench gateMOSFET devices commercially manufacturable, 200 mmengineered substrates with a poly-AlN core are a good sub-strate choice. The poly-AlN core, matched in thermal expan-sion to GaN, allows to grow high-quality thick GaN layers.Up to 11 mu m-thick GaN stacks were grown crack-free, withexcellent control over the wafer warp. Breakdown valuesof 900 V were reached for the vertical p/n-junction. Fulldevice processing was completed in a CMOS-compatiblepilot line without any wafer breakage, demonstrating themechanical strength of these substrates. On module level,a new gate trench profile combining a smooth sidewall andround corners, is presented. While a smooth sidewall isimportant for theON-state performance of the devices, therounded corners are beneficial for theOFF-state operation.A semi-vertical test vehicle was used to demonstrate theON-state of the fabricated power transistors. For devices withan effective gate width (WG,eff) of 180 mm and an activearea of 1.4 mm2, an ON-state resistance could be achievedof 8 m Omegacm(2). By scaling the source contact length down,the device footprint could be decreased further. It is shownthat for devices with a W(G,eff )of 60 mm this value could befurther improved with best performing devices showing a 6.2 m Omegacm(2 )ON-state resistance
Keywords
Substrates, Logic gates, Epitaxial growth, Silicon, Resistance, MOSFET, Performance evaluation, GaN, manufacturability, power, trench gate, vertical devices

Downloads

  • Download
    IT69 Geens TED23 Route Toward Commercially Manufacturable Vertical GaN Devices.pdf
    • full text (Published version)
    • |
    • open access
    • |
    • PDF
    • |
    • 4.46 MB

Citation

Please use this url to cite or link to this publication:

MLA
Geens, Karen, et al. “Route toward Commercially Manufacturable Vertical GaN Devices.” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 71, no. 3, 2024, pp. 1488–93, doi:10.1109/TED.2023.3340661.
APA
Geens, K., Borga, M., Khan, M. A., Goncalez Filho, W., Vohra, A., Banerjee, S., … Decoutere, S. (2024). Route toward commercially manufacturable vertical GaN devices. IEEE TRANSACTIONS ON ELECTRON DEVICES, 71(3), 1488–1493. https://doi.org/10.1109/TED.2023.3340661
Chicago author-date
Geens, Karen, M. Borga, M. A. Khan, W. Goncalez Filho, A. Vohra, S. Banerjee, K. J. Lee, et al. 2024. “Route toward Commercially Manufacturable Vertical GaN Devices.” IEEE TRANSACTIONS ON ELECTRON DEVICES 71 (3): 1488–93. https://doi.org/10.1109/TED.2023.3340661.
Chicago author-date (all authors)
Geens, Karen, M. Borga, M. A. Khan, W. Goncalez Filho, A. Vohra, S. Banerjee, K. J. Lee, U. Chatterjee, D. Cingu, Benoit Bakeroot, and S. Decoutere. 2024. “Route toward Commercially Manufacturable Vertical GaN Devices.” IEEE TRANSACTIONS ON ELECTRON DEVICES 71 (3): 1488–1493. doi:10.1109/TED.2023.3340661.
Vancouver
1.
Geens K, Borga M, Khan MA, Goncalez Filho W, Vohra A, Banerjee S, et al. Route toward commercially manufacturable vertical GaN devices. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2024;71(3):1488–93.
IEEE
[1]
K. Geens et al., “Route toward commercially manufacturable vertical GaN devices,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 71, no. 3, pp. 1488–1493, 2024.
@article{01HTHR1QQ2G6RK09VSW5M9MCXD,
  abstract     = {{To make vertical GaN-based trench gateMOSFET devices commercially manufacturable, 200 mmengineered substrates with a poly-AlN core are a good sub-strate choice. The poly-AlN core, matched in thermal expan-sion to GaN, allows to grow high-quality thick GaN layers.Up to 11 mu m-thick GaN stacks were grown crack-free, withexcellent control over the wafer warp. Breakdown valuesof 900 V were reached for the vertical p/n-junction. Fulldevice processing was completed in a CMOS-compatiblepilot line without any wafer breakage, demonstrating themechanical strength of these substrates. On module level,a new gate trench profile combining a smooth sidewall andround corners, is presented. While a smooth sidewall isimportant for theON-state performance of the devices, therounded corners are beneficial for theOFF-state operation.A semi-vertical test vehicle was used to demonstrate theON-state of the fabricated power transistors. For devices withan effective gate width (WG,eff) of 180 mm and an activearea of 1.4 mm2, an ON-state resistance could be achievedof 8 m Omegacm(2). By scaling the source contact length down,the device footprint could be decreased further. It is shownthat for devices with a W(G,eff )of 60 mm this value could befurther improved with best performing devices showing a 6.2 m Omegacm(2 )ON-state resistance}},
  author       = {{Geens, Karen and  Borga, M. and  Khan, M. A. and  Goncalez Filho, W. and  Vohra, A. and  Banerjee, S. and  Lee, K. J. and  Chatterjee, U. and  Cingu, D. and Bakeroot, Benoit and  Decoutere, S.}},
  issn         = {{0018-9383}},
  journal      = {{IEEE TRANSACTIONS ON ELECTRON DEVICES}},
  keywords     = {{Substrates,Logic gates,Epitaxial growth,Silicon,Resistance,MOSFET,Performance evaluation,GaN,manufacturability,power,trench gate,vertical devices}},
  language     = {{eng}},
  number       = {{3}},
  pages        = {{1488--1493}},
  title        = {{Route toward commercially manufacturable vertical GaN devices}},
  url          = {{http://doi.org/10.1109/TED.2023.3340661}},
  volume       = {{71}},
  year         = {{2024}},
}
Altmetric
View in Altmetric
Web of Science
Times cited: