High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps
- Author
- D. Favero, A. Cavaliere, C. De Santi, M. Borga, Walter Gonçalez Filho (UGent) , K. Geens, Benoit Bakeroot (UGent) , S. Decoutere, G. Meneghesso, E. Zanoni and M. Meneghini
- Organization
- Abstract
- For the first time we investigate the positive threshold voltage instability in GaN-based trench gate MOSFETs in the high-temperature regime (150-240 degrees C). First, by inverse Laplace transform we determine the equivalent distribution of activation energies of the traps responsible for PBTI, with a peak at 0.75 eV from the conduction band of GaN. Second, we demonstrate that the recovery transients have a non-monotonic trend. This result, never described before, is attributed to the interplay between electron de-trapping from border traps, and hole de-trapping from defects in the p- type body layer, located 0.65 eV above the valence band energy of GaN, and preliminary ascribed to gallium vacancies in the semiconductor. Results provide relevant insight for optimizing the high-temperature stability of GaN vertical FETs.
- Keywords
- GaN-on-Si, trench gate MOSFET, vertical GaN, Reliability, PBTI
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Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-01HTHNQ6HPWVHT6WBF5NXJ5VY2
- MLA
- Favero, D., et al. “High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs : Role of Border and Semiconductor Traps.” 2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS, IEEE, 2023, doi:10.1109/IRPS48203.2023.10117667.
- APA
- Favero, D., Cavaliere, A., De Santi, C., Borga, M., Gonçalez Filho, W., Geens, K., … Meneghini, M. (2023). High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps. 2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS. Presented at the 61st IEEE International Reliability Physics Symposium (IRPS), Monterey, CA. https://doi.org/10.1109/IRPS48203.2023.10117667
- Chicago author-date
- Favero, D., A. Cavaliere, C. De Santi, M. Borga, Walter Gonçalez Filho, K. Geens, Benoit Bakeroot, et al. 2023. “High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs : Role of Border and Semiconductor Traps.” In 2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS. IEEE. https://doi.org/10.1109/IRPS48203.2023.10117667.
- Chicago author-date (all authors)
- Favero, D., A. Cavaliere, C. De Santi, M. Borga, Walter Gonçalez Filho, K. Geens, Benoit Bakeroot, S. Decoutere, G. Meneghesso, E. Zanoni, and M. Meneghini. 2023. “High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs : Role of Border and Semiconductor Traps.” In 2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS. IEEE. doi:10.1109/IRPS48203.2023.10117667.
- Vancouver
- 1.Favero D, Cavaliere A, De Santi C, Borga M, Gonçalez Filho W, Geens K, et al. High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps. In: 2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS. IEEE; 2023.
- IEEE
- [1]D. Favero et al., “High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps,” in 2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS, Monterey, CA, 2023.
@inproceedings{01HTHNQ6HPWVHT6WBF5NXJ5VY2,
abstract = {{For the first time we investigate the positive threshold voltage instability in GaN-based trench gate MOSFETs in the high-temperature regime (150-240 degrees C). First, by inverse Laplace transform we determine the equivalent distribution of activation energies of the traps responsible for PBTI, with a peak at 0.75 eV from the conduction band of GaN. Second, we demonstrate that the recovery transients have a non-monotonic trend. This result, never described before, is attributed to the interplay between electron de-trapping from border traps, and hole de-trapping from defects in the p- type body layer, located 0.65 eV above the valence band energy of GaN, and preliminary ascribed to gallium vacancies in the semiconductor. Results provide relevant insight for optimizing the high-temperature stability of GaN vertical FETs.}},
author = {{Favero, D. and Cavaliere, A. and De Santi, C. and Borga, M. and Gonçalez Filho, Walter and Geens, K. and Bakeroot, Benoit and Decoutere, S. and Meneghesso, G. and Zanoni, E. and Meneghini, M.}},
booktitle = {{2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS}},
isbn = {{9781665456722}},
issn = {{1541-7026}},
keywords = {{GaN-on-Si,trench gate MOSFET,vertical GaN,Reliability,PBTI}},
language = {{eng}},
location = {{Monterey, CA}},
pages = {{6}},
publisher = {{IEEE}},
title = {{High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps}},
url = {{http://doi.org/10.1109/IRPS48203.2023.10117667}},
year = {{2023}},
}
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