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Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

D. Favero, C. De Santi, K. Mukherjee, M. Borga, K. Geens, U. Chatterjee, Benoit Bakeroot (UGent) , S. Decoutere, F. Rampazzo, G. Meneghesso, et al.
(2022) MICROELECTRONICS RELIABILITY. 138.
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Abstract
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material properties. To this aim, we report a detailed analysis of breakdown performance of planar GaN-on-Si MOS capacitors. The analysis is carried out on capacitors processed on different GaN bulk doping (6E18 Si/cc, 6E17 Si/cc and 2.5E18 Mg/cc, p-type), different structures (planar, trench-like) and different geometries (area, perimeter and shape). We demonstrate that (i) capacitors on p-GaN have better breakdown performance; (ii) the presence of a trench structure significantly reduces break-down capabilities; (iii) breakdown voltage is dependent on area, with a decreasing robustness for increasing dimensions; (iv) breakdown voltage is independent of shape (rectangular, circular). TCAD simulations, in agreement with the measurements, illustrate the electric field distribution near breakdown and clarify the results obtained experimentally.
Keywords
GaN-on-Si, MOS capacitors, Breakdown, Gate stack, Doping and geometry

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MLA
Favero, D., et al. “Impact of Doping and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors.” MICROELECTRONICS RELIABILITY, vol. 138, 2022, doi:10.1016/j.microrel.2022.114620.
APA
Favero, D., De Santi, C., Mukherjee, K., Borga, M., Geens, K., Chatterjee, U., … Meneghini, M. (2022). Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors. MICROELECTRONICS RELIABILITY, 138. https://doi.org/10.1016/j.microrel.2022.114620
Chicago author-date
Favero, D., C. De Santi, K. Mukherjee, M. Borga, K. Geens, U. Chatterjee, Benoit Bakeroot, et al. 2022. “Impact of Doping and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors.” MICROELECTRONICS RELIABILITY 138. https://doi.org/10.1016/j.microrel.2022.114620.
Chicago author-date (all authors)
Favero, D., C. De Santi, K. Mukherjee, M. Borga, K. Geens, U. Chatterjee, Benoit Bakeroot, S. Decoutere, F. Rampazzo, G. Meneghesso, E. Zanoni, and M. Meneghini. 2022. “Impact of Doping and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors.” MICROELECTRONICS RELIABILITY 138. doi:10.1016/j.microrel.2022.114620.
Vancouver
1.
Favero D, De Santi C, Mukherjee K, Borga M, Geens K, Chatterjee U, et al. Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors. MICROELECTRONICS RELIABILITY. 2022;138.
IEEE
[1]
D. Favero et al., “Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors,” MICROELECTRONICS RELIABILITY, vol. 138, 2022.
@article{01HTHMN00BV7A1ZTNCG2CEDAF8,
  abstract     = {{For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material properties. To this aim, we report a detailed analysis of breakdown performance of planar GaN-on-Si MOS capacitors. The analysis is carried out on capacitors processed on different GaN bulk doping (6E18 Si/cc, 6E17 Si/cc and 2.5E18 Mg/cc, p-type), different structures (planar, trench-like) and different geometries (area, perimeter and shape). We demonstrate that (i) capacitors on p-GaN have better breakdown performance; (ii) the presence of a trench structure significantly reduces break-down capabilities; (iii) breakdown voltage is dependent on area, with a decreasing robustness for increasing dimensions; (iv) breakdown voltage is independent of shape (rectangular, circular). TCAD simulations, in agreement with the measurements, illustrate the electric field distribution near breakdown and clarify the results obtained experimentally.}},
  articleno    = {{114620}},
  author       = {{Favero, D. and  De Santi, C. and  Mukherjee, K. and  Borga, M. and  Geens, K. and  Chatterjee, U. and Bakeroot, Benoit and  Decoutere, S. and  Rampazzo, F. and  Meneghesso, G. and  Zanoni, E. and  Meneghini, M.}},
  issn         = {{0026-2714}},
  journal      = {{MICROELECTRONICS RELIABILITY}},
  keywords     = {{GaN-on-Si,MOS capacitors,Breakdown,Gate stack,Doping and geometry}},
  language     = {{eng}},
  pages        = {{4}},
  title        = {{Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors}},
  url          = {{http://doi.org/10.1016/j.microrel.2022.114620}},
  volume       = {{138}},
  year         = {{2022}},
}
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