@article{01HTHM1BHJ5Q55M4D7C8SB9ER9,
  abstract     = {{In this paper, for the first time the threshold voltage instability of 100 V rated p-GaN power HEMTs is investi-gated by combined pulsed-IV measurements and capture and emission time (CET) MAPS, by investigating a remarkable time window of 9 decades, from 1 mu s to 1000 s. After a statistical analysis to demonstrate the repeatability of the experimental results, pulsed IV characterization revealed the existence of a non-monotonic Delta VTH shift, as a function of the (positive) gate stress bias. To gain further insight on the positive threshold shift, CET MAP analysis has been carried out at different temperatures: the results provide relevant insight on the physical properties of the population of traps responsible for the VTH shift, most likely located at the AlGaN/GaN interface. In addition, the related capture and emission time-constant as a function of temperature are investi-gated, thus allowing to extract the activation energies for the trapping and de-trapping processes, and to propose a model for the trapping mechanisms.}},
  articleno    = {{114708}},
  author       = {{Modolo, N. and  Fregolent, M. and  Masin, F. and  Benato, A. and  Bettini, A. and  Buffolo, M. and  De Santi, C. and  Borga, M. and  Posthuma, N. and Bakeroot, Benoit and  Decoutere, S. and  Vogrig, D. and  Neviani, A. and  Meneghesso, G. and  Zanoni, E. and  Meneghini, M.}},
  issn         = {{0026-2714}},
  journal      = {{MICROELECTRONICS RELIABILITY}},
  keywords     = {{Charge trapping,p-GaN power HEMTs,PBTI,Capture and emission time map,Threshold voltage shift,THRESHOLD VOLTAGE,MODEL}},
  language     = {{eng}},
  pages        = {{5}},
  title        = {{Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs}},
  url          = {{http://doi.org/10.1016/j.microrel.2022.114708}},
  volume       = {{138}},
  year         = {{2022}},
}

Altmetric

View in Altmetric

Web of Science

Times cited: