Enhancement of underlayer coverage in sub-millimeter bilayer graphene by modifying the streamline direction
- Author
- Yao Li, Qiming Sun (UGent) , Zhendong Wang, Jianyu Wang, Meifeng Liu, Yunlong Xie, Xiuzhang Wang, Hong Li, Jun-Ming Liu, Di Wu and Li Wang
- Organization
- Abstract
- The growth of large-scale bilayer graphene (bi-graphene) is significantly important for graphene-based device fabrications. Chemical vapor deposition is usually used for the synthesis of high-quality and large-scale thin films including various monolayers and bilayers. However, a major challenge for bi-graphene growth is the so-called limited underlayer coverage, i.e., the faster growth of the top layer than the underlayer. Herein, using the circumfluence chemical vapor deposition, it is demonstrated that the underlayer growth can be greatly enhanced via optimizing the streamline, and high-quality AB-stacking sub-millimeter bi-graphene with underlayer coverage over 93% is achieved successfully. Raman spectroscopy and selected area electron diffraction confirm the high crystalline quality and uniformity of the as-grown bilayers. The as-fabricated field-effect transistor using the bi-graphene as the channel layer exhibits typical semiconductor transfer characteristics and a nonzero bandgap which is required for device applications. It is suggested that the optimized streamline design largely allows a reduction of difference in the edge growth kinetics between the top and bottom layers. Thus, in this work, a promising technical route is presented for the growth of large-scale bi-graphene with high underlayer coverage, beneficial for the development of functional graphene devices.
- Keywords
- bilayer graphenes, circumfluence-CVDs, high underlayer coverages, streamline modifications, CHEMICAL-VAPOR-DEPOSITION, FIELD-EFFECT TRANSISTORS, SINGLE-CRYSTALS, BAND-GAP, GROWTH, COPPER, TRANSPORT, LAYER, SUPERCONDUCTIVITY, CONDUCTIVITY
Downloads
-
(...).pdf
- full text (Published version)
- |
- UGent only
- |
- |
- 3.10 MB
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-01HRN0R94YQ9HRT96V9BD1E5VM
- MLA
- Li, Yao, et al. “Enhancement of Underlayer Coverage in Sub-Millimeter Bilayer Graphene by Modifying the Streamline Direction.” ADVANCED ENGINEERING MATERIALS, vol. 25, no. 21, 2023, doi:10.1002/adem.202300793.
- APA
- Li, Y., Sun, Q., Wang, Z., Wang, J., Liu, M., Xie, Y., … Wang, L. (2023). Enhancement of underlayer coverage in sub-millimeter bilayer graphene by modifying the streamline direction. ADVANCED ENGINEERING MATERIALS, 25(21). https://doi.org/10.1002/adem.202300793
- Chicago author-date
- Li, Yao, Qiming Sun, Zhendong Wang, Jianyu Wang, Meifeng Liu, Yunlong Xie, Xiuzhang Wang, et al. 2023. “Enhancement of Underlayer Coverage in Sub-Millimeter Bilayer Graphene by Modifying the Streamline Direction.” ADVANCED ENGINEERING MATERIALS 25 (21). https://doi.org/10.1002/adem.202300793.
- Chicago author-date (all authors)
- Li, Yao, Qiming Sun, Zhendong Wang, Jianyu Wang, Meifeng Liu, Yunlong Xie, Xiuzhang Wang, Hong Li, Jun-Ming Liu, Di Wu, and Li Wang. 2023. “Enhancement of Underlayer Coverage in Sub-Millimeter Bilayer Graphene by Modifying the Streamline Direction.” ADVANCED ENGINEERING MATERIALS 25 (21). doi:10.1002/adem.202300793.
- Vancouver
- 1.Li Y, Sun Q, Wang Z, Wang J, Liu M, Xie Y, et al. Enhancement of underlayer coverage in sub-millimeter bilayer graphene by modifying the streamline direction. ADVANCED ENGINEERING MATERIALS. 2023;25(21).
- IEEE
- [1]Y. Li et al., “Enhancement of underlayer coverage in sub-millimeter bilayer graphene by modifying the streamline direction,” ADVANCED ENGINEERING MATERIALS, vol. 25, no. 21, 2023.
@article{01HRN0R94YQ9HRT96V9BD1E5VM,
abstract = {{The growth of large-scale bilayer graphene (bi-graphene) is significantly important for graphene-based device fabrications. Chemical vapor deposition is usually used for the synthesis of high-quality and large-scale thin films including various monolayers and bilayers. However, a major challenge for bi-graphene growth is the so-called limited underlayer coverage, i.e., the faster growth of the top layer than the underlayer. Herein, using the circumfluence chemical vapor deposition, it is demonstrated that the underlayer growth can be greatly enhanced via optimizing the streamline, and high-quality AB-stacking sub-millimeter bi-graphene with underlayer coverage over 93% is achieved successfully. Raman spectroscopy and selected area electron diffraction confirm the high crystalline quality and uniformity of the as-grown bilayers. The as-fabricated field-effect transistor using the bi-graphene as the channel layer exhibits typical semiconductor transfer characteristics and a nonzero bandgap which is required for device applications. It is suggested that the optimized streamline design largely allows a reduction of difference in the edge growth kinetics between the top and bottom layers. Thus, in this work, a promising technical route is presented for the growth of large-scale bi-graphene with high underlayer coverage, beneficial for the development of functional graphene devices.}},
articleno = {{2300793}},
author = {{Li, Yao and Sun, Qiming and Wang, Zhendong and Wang, Jianyu and Liu, Meifeng and Xie, Yunlong and Wang, Xiuzhang and Li, Hong and Liu, Jun-Ming and Wu, Di and Wang, Li}},
issn = {{1438-1656}},
journal = {{ADVANCED ENGINEERING MATERIALS}},
keywords = {{bilayer graphenes,circumfluence-CVDs,high underlayer coverages,streamline modifications,CHEMICAL-VAPOR-DEPOSITION,FIELD-EFFECT TRANSISTORS,SINGLE-CRYSTALS,BAND-GAP,GROWTH,COPPER,TRANSPORT,LAYER,SUPERCONDUCTIVITY,CONDUCTIVITY}},
language = {{eng}},
number = {{21}},
pages = {{10}},
title = {{Enhancement of underlayer coverage in sub-millimeter bilayer graphene by modifying the streamline direction}},
url = {{http://doi.org/10.1002/adem.202300793}},
volume = {{25}},
year = {{2023}},
}
- Altmetric
- View in Altmetric
- Web of Science
- Times cited: