Academic Bibliography

 Search 200 years of publications by Ghent University researchers.
Advanced search
1 file | 1.45 MB
Add to list
  1. Search results
  2. Thin and locally dislocation-free SiG...

Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growth

Yuji Yamamoto, Wei-Chen Wen, Markus Andreas Schubert, Agnieszka Anna Corley-Wiciak, Sho Sugawa, Yuta Ito, Ryo Yokogawa, Han Han, Roger Loo (UGent) , Atsushi Ogura, et al.
(2024) JAPANESE JOURNAL OF APPLIED PHYSICS. 63(2).
Author
Organization
Abstract
Locally dislocation-free SiGe-on-insulator (SGOI) is fabricated by CVD. Lateral selective SiGe growth of similar to 30%, similar to 45% and similar to 55% of Ge content is performed around similar to 1 mu m square Si(001) pillar located under the center of a 6.3 mu m square SiO2 on Si-on-insulator substrate which is formed by H2-HCl vapor-phase etching. In the deposited SiGe layer, tensile strain is observed by top-view. The degree of strain is slightly increased at the corner of the SiGe. The tensile strain is caused by the partial compressive strain of SiGe in lateral direction and thermal expansion difference between Si and SiGe. Slightly higher Ge incorporation is observed in higher tensile strain region. At the peaks formed between the facets of growth front, Ge incorporation is reduced. These phenomena are pronounced for SiGe with higher Ge contents. Locally dislocation-free SGOI, which is beneficial for emerging device integration, is formed along 010 from the Si pillar by lateral aspect-ratio-trapping.
Keywords
selective epitaxy, chemical vapor delposition, SiGe, strain, dislocation, SiGe-on-insulator, aspect-ratio-trapping, HETEROEPITAXIAL GROWTH, SILICON, GE

Downloads

  • Download
    Yamamoto 2024 Jpn. J. Appl. Phys. 63 02SP53.pdf
    • full text (Published version)
    • |
    • open access
    • |
    • PDF
    • |
    • 1.45 MB

Citation

Please use this url to cite or link to this publication:

MLA
Yamamoto, Yuji, et al. “Thin and Locally Dislocation-Free SiGe Virtual Substrate Fabrication by Lateral Selective Growth.” JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 63, no. 2, 2024, doi:10.35848/1347-4065/ad189d.
APA
Yamamoto, Y., Wen, W.-C., Schubert, M. A., Corley-Wiciak, A. A., Sugawa, S., Ito, Y., … Tillack, B. (2024). Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growth. JAPANESE JOURNAL OF APPLIED PHYSICS, 63(2). https://doi.org/10.35848/1347-4065/ad189d
Chicago author-date
Yamamoto, Yuji, Wei-Chen Wen, Markus Andreas Schubert, Agnieszka Anna Corley-Wiciak, Sho Sugawa, Yuta Ito, Ryo Yokogawa, et al. 2024. “Thin and Locally Dislocation-Free SiGe Virtual Substrate Fabrication by Lateral Selective Growth.” JAPANESE JOURNAL OF APPLIED PHYSICS 63 (2). https://doi.org/10.35848/1347-4065/ad189d.
Chicago author-date (all authors)
Yamamoto, Yuji, Wei-Chen Wen, Markus Andreas Schubert, Agnieszka Anna Corley-Wiciak, Sho Sugawa, Yuta Ito, Ryo Yokogawa, Han Han, Roger Loo, Atsushi Ogura, and Bernd Tillack. 2024. “Thin and Locally Dislocation-Free SiGe Virtual Substrate Fabrication by Lateral Selective Growth.” JAPANESE JOURNAL OF APPLIED PHYSICS 63 (2). doi:10.35848/1347-4065/ad189d.
Vancouver
1.
Yamamoto Y, Wen W-C, Schubert MA, Corley-Wiciak AA, Sugawa S, Ito Y, et al. Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growth. JAPANESE JOURNAL OF APPLIED PHYSICS. 2024;63(2).
IEEE
[1]
Y. Yamamoto et al., “Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growth,” JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 63, no. 2, 2024.
@article{01HKMHYAP43YW93Z9NV0VR8G9G,
  abstract     = {{Locally dislocation-free SiGe-on-insulator (SGOI) is fabricated by CVD. Lateral selective SiGe growth of similar to 30%, similar to 45% and similar to 55% of Ge content is performed around similar to 1 mu m square Si(001) pillar located under the center of a 6.3 mu m square SiO2 on Si-on-insulator substrate which is formed by H2-HCl vapor-phase etching. In the deposited SiGe layer, tensile strain is observed by top-view. The degree of strain is slightly increased at the corner of the SiGe. The tensile strain is caused by the partial compressive strain of SiGe in lateral direction and thermal expansion difference between Si and SiGe. Slightly higher Ge incorporation is observed in higher tensile strain region. At the peaks formed between the facets of growth front, Ge incorporation is reduced. These phenomena are pronounced for SiGe with higher Ge contents. Locally dislocation-free SGOI, which is beneficial for emerging device integration, is formed along 010 from the Si pillar by lateral aspect-ratio-trapping.}},
  articleno    = {{02SP53}},
  author       = {{Yamamoto, Yuji and Wen, Wei-Chen and Schubert, Markus Andreas and Corley-Wiciak, Agnieszka Anna and Sugawa, Sho and Ito, Yuta and Yokogawa, Ryo and Han, Han and Loo, Roger and Ogura, Atsushi and Tillack, Bernd}},
  issn         = {{0021-4922}},
  journal      = {{JAPANESE JOURNAL OF APPLIED PHYSICS}},
  keywords     = {{selective epitaxy,chemical vapor delposition,SiGe,strain,dislocation,SiGe-on-insulator,aspect-ratio-trapping,HETEROEPITAXIAL GROWTH,SILICON,GE}},
  language     = {{eng}},
  number       = {{2}},
  pages        = {{7}},
  title        = {{Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growth}},
  url          = {{http://doi.org/10.35848/1347-4065/ad189d}},
  volume       = {{63}},
  year         = {{2024}},
}
Altmetric
View in Altmetric
Web of Science
Times cited: