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Understanding the optical degradation of 845 nm micro-transfer-printed VCSILs for photonic integrated circuits

Michele Zenari, Matteo Buffolo, Mirko Fornasier, Carlo De Santi, Jeroen Goyvaerts, Alexander Grabowski, Johan Gustavsson, Sulakshna Kumari (UGent) , Andim Stassren, Roel Baets (UGent) , et al.
(2023) IEEE JOURNAL OF QUANTUM ELECTRONICS. 59(4).
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Abstract
For the first time we investigate the optical degradation of vertical-cavity silicon-integrated lasers VCSILs) designed for operation at 845 nm in photonic integrated circuits (PICs). The study is based on the combined electro-optical characterization of VCSIL, submitted to constant-current stress tests at different current levels. The original results obtained within the manuscript indicate that degradation is related to the diffusion of impurities. Remarkably, depending on the region through which these impurities are migrating, the diffusion process affects device characteristics in different ways. During Phase 1 (Ph1), compensating impurities originating from the metal-semiconductor contact cross the top DBR, thus degrading mirror reflectivity, which is rarely observed in the literature, and leading to an increase in the threshold current of the device. As the impurities start reaching the active region we observe the onset of Phase 2 (Ph2), during which both threshold current and sub-threshold slope worsen, due to the increase of the Shockley-Read-Hall recombination rate. This phase is also characterized by a measurable increase in series resistance, which is ascribed to a change in the resistance of the oxide aperture. The identification of the root cause of physical degradation represents a fundamental step for future lifetime improvement of these novel optical sources, which are set to replace conventional solid-state sources in the $0.85 \mu \text{m}$ communication window.
Keywords
Degradation, VCSIL, diffusion, PICs, FAILURE

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Citation

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MLA
Zenari, Michele, et al. “Understanding the Optical Degradation of 845 Nm Micro-Transfer-Printed VCSILs for Photonic Integrated Circuits.” IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. 59, no. 4, 2023, doi:10.1109/jqe.2023.3283514.
APA
Zenari, M., Buffolo, M., Fornasier, M., De Santi, C., Goyvaerts, J., Grabowski, A., … Meneghini, M. (2023). Understanding the optical degradation of 845 nm micro-transfer-printed VCSILs for photonic integrated circuits. IEEE JOURNAL OF QUANTUM ELECTRONICS, 59(4). https://doi.org/10.1109/jqe.2023.3283514
Chicago author-date
Zenari, Michele, Matteo Buffolo, Mirko Fornasier, Carlo De Santi, Jeroen Goyvaerts, Alexander Grabowski, Johan Gustavsson, et al. 2023. “Understanding the Optical Degradation of 845 Nm Micro-Transfer-Printed VCSILs for Photonic Integrated Circuits.” IEEE JOURNAL OF QUANTUM ELECTRONICS 59 (4). https://doi.org/10.1109/jqe.2023.3283514.
Chicago author-date (all authors)
Zenari, Michele, Matteo Buffolo, Mirko Fornasier, Carlo De Santi, Jeroen Goyvaerts, Alexander Grabowski, Johan Gustavsson, Sulakshna Kumari, Andim Stassren, Roel Baets, Anders Larsson, Günther Roelkens, Gaudenzio Meneghesso, Enrico Zanoni, and Matteo Meneghini. 2023. “Understanding the Optical Degradation of 845 Nm Micro-Transfer-Printed VCSILs for Photonic Integrated Circuits.” IEEE JOURNAL OF QUANTUM ELECTRONICS 59 (4). doi:10.1109/jqe.2023.3283514.
Vancouver
1.
Zenari M, Buffolo M, Fornasier M, De Santi C, Goyvaerts J, Grabowski A, et al. Understanding the optical degradation of 845 nm micro-transfer-printed VCSILs for photonic integrated circuits. IEEE JOURNAL OF QUANTUM ELECTRONICS. 2023;59(4).
IEEE
[1]
M. Zenari et al., “Understanding the optical degradation of 845 nm micro-transfer-printed VCSILs for photonic integrated circuits,” IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. 59, no. 4, 2023.
@article{01HA9K5FNEEQSS77HZ3S3A216C,
  abstract     = {{For the first time we investigate the optical degradation of vertical-cavity silicon-integrated lasers VCSILs) designed for operation at 845 nm in photonic integrated circuits (PICs). The study is based on the combined electro-optical characterization of VCSIL, submitted to constant-current stress tests at different current levels. The original results obtained within the manuscript indicate that degradation is related to the diffusion of impurities. Remarkably, depending on the region through which these impurities are migrating, the diffusion process affects device characteristics in different ways. During Phase 1 (Ph1), compensating impurities originating from the metal-semiconductor contact cross the top DBR, thus degrading mirror reflectivity, which is rarely observed in the literature, and leading to an increase in the threshold current of the device. As the impurities start reaching the active region we observe the onset of Phase 2 (Ph2), during which both threshold current and sub-threshold slope worsen, due to the increase of the Shockley-Read-Hall recombination rate. This phase is also characterized by a measurable increase in series resistance, which is ascribed to a change in the resistance of the oxide aperture. The identification of the root cause of physical degradation represents a fundamental step for future lifetime improvement of these novel optical sources, which are set to replace conventional solid-state sources in the $0.85 \mu \text{m}$ communication window.}},
  articleno    = {{2400210}},
  author       = {{Zenari, Michele and Buffolo, Matteo and Fornasier, Mirko and De Santi, Carlo and Goyvaerts, Jeroen and Grabowski, Alexander and Gustavsson, Johan and Kumari, Sulakshna and Stassren, Andim and Baets, Roel and Larsson, Anders and Roelkens, Günther and Meneghesso, Gaudenzio and Zanoni, Enrico and Meneghini, Matteo}},
  issn         = {{0018-9197}},
  journal      = {{IEEE JOURNAL OF QUANTUM ELECTRONICS}},
  keywords     = {{Degradation,VCSIL,diffusion,PICs,FAILURE}},
  language     = {{eng}},
  location     = {{San Jose, CA}},
  number       = {{4}},
  pages        = {{10}},
  title        = {{Understanding the optical degradation of 845 nm micro-transfer-printed VCSILs for photonic integrated circuits}},
  url          = {{http://doi.org/10.1109/jqe.2023.3283514}},
  volume       = {{59}},
  year         = {{2023}},
}
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