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Wafer-scale hybrid integration of InP DFB lasers on Si photonics by flip-chip bonding with sub-300nm alignment precision

Aleksandrs Marinins, Sebastian Hansch, Huseyin Sar, Francois Chancerel, Negin Golshani, Hsiao-Lun Wang, Artemisia Tsiara, David Coenen, Peter Verheyen, Giovanni Capuz, et al.
(2023) IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. 29(3).
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Abstract
InP DFB lasers are flip-chip bonded to 300 mm Si photonic wafers using a pick-and-place tool with an advanced vision system, realizing high-precision and high-throughput passive assembly. By careful co-design of the InP-Si Photonics electrical, optical and mechanical interface, as well as dedicated alignment fiducials, sub-300 nm post-bonding alignment precision is realized in a 25 s cycle time. Optical coupling losses of -1.5 +/--0.5 dB are achieved at 1550 nm wavelength after epoxy underfill, with up to 40 mW of optical power coupled to the SiN waveguides on the Si photonics wafer. The bonding interface adds less than 10% to the series resistance of the laser diodes and post-bonding thermal resistance is measured to be 76 K/W (or 27 K.mm/W), mostly dominated by heat spreading resistance in the InP lasers as suggested by in-depth thermal modeling. Although the assembled lasers suffer from significant, unintentional optical backreflection from the fiber grating couplers used for optical characterization, laser linewidths well below 1 MHz have been measured under specific drive conditions, as supported by a detailed laser noise analysis. Finally, we demonstrate the ability of bonded laser assemblies to pass early reliability tests.
Keywords
Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Flip-chip devices, hybrid integrated circuits, semiconductor lasers, silicon photonics

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MLA
Marinins, Aleksandrs, et al. “Wafer-Scale Hybrid Integration of InP DFB Lasers on Si Photonics by Flip-Chip Bonding with Sub-300nm Alignment Precision.” IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, vol. 29, no. 3, 2023, doi:10.1109/jstqe.2022.3223641.
APA
Marinins, A., Hansch, S., Sar, H., Chancerel, F., Golshani, N., Wang, H.-L., … Van Campenhout, J. (2023). Wafer-scale hybrid integration of InP DFB lasers on Si photonics by flip-chip bonding with sub-300nm alignment precision. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 29(3). https://doi.org/10.1109/jstqe.2022.3223641
Chicago author-date
Marinins, Aleksandrs, Sebastian Hansch, Huseyin Sar, Francois Chancerel, Negin Golshani, Hsiao-Lun Wang, Artemisia Tsiara, et al. 2023. “Wafer-Scale Hybrid Integration of InP DFB Lasers on Si Photonics by Flip-Chip Bonding with Sub-300nm Alignment Precision.” IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 29 (3). https://doi.org/10.1109/jstqe.2022.3223641.
Chicago author-date (all authors)
Marinins, Aleksandrs, Sebastian Hansch, Huseyin Sar, Francois Chancerel, Negin Golshani, Hsiao-Lun Wang, Artemisia Tsiara, David Coenen, Peter Verheyen, Giovanni Capuz, Yannick De Koninck, Ozan Yilmaz, Geert Morthier, Filip Schleicher, Geraldine Jamieson, Stuart Smyth, Andrew McKee, Yoojin Ban, Marianna Pantouvaki, Douglas Charles La Tulipe, and Joris Van Campenhout. 2023. “Wafer-Scale Hybrid Integration of InP DFB Lasers on Si Photonics by Flip-Chip Bonding with Sub-300nm Alignment Precision.” IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 29 (3). doi:10.1109/jstqe.2022.3223641.
Vancouver
1.
Marinins A, Hansch S, Sar H, Chancerel F, Golshani N, Wang H-L, et al. Wafer-scale hybrid integration of InP DFB lasers on Si photonics by flip-chip bonding with sub-300nm alignment precision. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. 2023;29(3).
IEEE
[1]
A. Marinins et al., “Wafer-scale hybrid integration of InP DFB lasers on Si photonics by flip-chip bonding with sub-300nm alignment precision,” IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, vol. 29, no. 3, 2023.
@article{01H932SCFQS1P5AMB5Y5CBP6CA,
  abstract     = {{InP DFB lasers are flip-chip bonded to 300 mm Si photonic wafers using a pick-and-place tool with an advanced vision system, realizing high-precision and high-throughput passive assembly. By careful co-design of the InP-Si Photonics electrical, optical and mechanical interface, as well as dedicated alignment fiducials, sub-300 nm post-bonding alignment precision is realized in a 25 s cycle time. Optical coupling losses of -1.5 +/--0.5 dB are achieved at 1550 nm wavelength after epoxy underfill, with up to 40 mW of optical power coupled to the SiN waveguides on the Si photonics wafer. The bonding interface adds less than 10% to the series resistance of the laser diodes and post-bonding thermal resistance is measured to be 76 K/W (or 27 K.mm/W), mostly dominated by heat spreading resistance in the InP lasers as suggested by in-depth thermal modeling. Although the assembled lasers suffer from significant, unintentional optical backreflection from the fiber grating couplers used for optical characterization, laser linewidths well below 1 MHz have been measured under specific drive conditions, as supported by a detailed laser noise analysis. Finally, we demonstrate the ability of bonded laser assemblies to pass early reliability tests.}},
  articleno    = {{8200311}},
  author       = {{Marinins, Aleksandrs and Hansch, Sebastian and Sar, Huseyin and Chancerel, Francois and Golshani, Negin and Wang, Hsiao-Lun and Tsiara, Artemisia and Coenen, David and Verheyen, Peter and Capuz, Giovanni and De Koninck, Yannick and Yilmaz, Ozan and Morthier, Geert and Schleicher, Filip and Jamieson, Geraldine and Smyth, Stuart and McKee, Andrew and Ban, Yoojin and Pantouvaki, Marianna and La Tulipe, Douglas Charles and Van Campenhout, Joris}},
  issn         = {{1077-260X}},
  journal      = {{IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS}},
  keywords     = {{Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Flip-chip devices,hybrid integrated circuits,semiconductor lasers,silicon photonics}},
  language     = {{eng}},
  number       = {{3}},
  pages        = {{11}},
  title        = {{Wafer-scale hybrid integration of InP DFB lasers on Si photonics by flip-chip bonding with sub-300nm alignment precision}},
  url          = {{http://doi.org/10.1109/jstqe.2022.3223641}},
  volume       = {{29}},
  year         = {{2023}},
}
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