
Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs
- Author
- Hongyue Wang, Eddy Simoen (UGent) , Lei Ge, Yuebo Liu, Chang Liu, Mingsheng Xu, Yijun Shi, Zongqi Cai, Yan Peng, Xiwei Wang and Jinwang Wang
- Organization
- Abstract
- In this work, the low frequency noise (LFN) characteristics of Hydrogen-terminated diamond FETs are investigated. Both generation-recombination (GR) noise and flicker noise (1/f noise) are found to contribute to the LFN spectrum. The characteristic frequency of f01 = 0.1 Hz, f02 = 30 Hz, f03 = 300 Hz and corresponding effective trap density (Neff) of the GR centers are obtained. By changing the LFN measurement temperature, a trap activation energy level (Ea) of 0.12 eV is extracted from an Arrhenius plot. The dominant mechanism of the 1/f noise for the H-terminated diamond FETs follows the correlated mobility fluctuations (CMF) model. By fitting the experimental data to the CMF model, the trap density and scattering coefficient of the carriers are extracted to be 6.4 x 10^20 eV−1 cm−3 and 4 x 10^5 V·s/C. At last, the trap density of the H-terminated diamond FETs is compared with other state-of-the-art GaN and Si based devices. A moderate trap density was obtained without any interface optimization, suggesting that H-terminated diamond FETs could be a promising future technology for power electronics.
- Keywords
- Electrical and Electronic Engineering, Materials Chemistry, Mechanical Engineering, General Chemistry, Electronic, Optical and Magnetic Materials, Hydrogen-terminated, Diamond, Low frequency noise, FETs, Traps, GR noise
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-01H63EQ4FXQC568M950FS2STHF
- MLA
- Wang, Hongyue, et al. “Study on Low-Frequency Noise Characteristics of Hydrogen-Terminated Diamond FETs.” DIAMOND AND RELATED MATERIALS, vol. 138, 2023, doi:10.1016/j.diamond.2023.110204.
- APA
- Wang, H., Simoen, E., Ge, L., Liu, Y., Liu, C., Xu, M., … Wang, J. (2023). Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs. DIAMOND AND RELATED MATERIALS, 138. https://doi.org/10.1016/j.diamond.2023.110204
- Chicago author-date
- Wang, Hongyue, Eddy Simoen, Lei Ge, Yuebo Liu, Chang Liu, Mingsheng Xu, Yijun Shi, et al. 2023. “Study on Low-Frequency Noise Characteristics of Hydrogen-Terminated Diamond FETs.” DIAMOND AND RELATED MATERIALS 138. https://doi.org/10.1016/j.diamond.2023.110204.
- Chicago author-date (all authors)
- Wang, Hongyue, Eddy Simoen, Lei Ge, Yuebo Liu, Chang Liu, Mingsheng Xu, Yijun Shi, Zongqi Cai, Yan Peng, Xiwei Wang, and Jinwang Wang. 2023. “Study on Low-Frequency Noise Characteristics of Hydrogen-Terminated Diamond FETs.” DIAMOND AND RELATED MATERIALS 138. doi:10.1016/j.diamond.2023.110204.
- Vancouver
- 1.Wang H, Simoen E, Ge L, Liu Y, Liu C, Xu M, et al. Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs. DIAMOND AND RELATED MATERIALS. 2023;138.
- IEEE
- [1]H. Wang et al., “Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs,” DIAMOND AND RELATED MATERIALS, vol. 138, 2023.
@article{01H63EQ4FXQC568M950FS2STHF, abstract = {{In this work, the low frequency noise (LFN) characteristics of Hydrogen-terminated diamond FETs are investigated. Both generation-recombination (GR) noise and flicker noise (1/f noise) are found to contribute to the LFN spectrum. The characteristic frequency of f01 = 0.1 Hz, f02 = 30 Hz, f03 = 300 Hz and corresponding effective trap density (Neff) of the GR centers are obtained. By changing the LFN measurement temperature, a trap activation energy level (Ea) of 0.12 eV is extracted from an Arrhenius plot. The dominant mechanism of the 1/f noise for the H-terminated diamond FETs follows the correlated mobility fluctuations (CMF) model. By fitting the experimental data to the CMF model, the trap density and scattering coefficient of the carriers are extracted to be 6.4 x 10^20 eV−1 cm−3 and 4 x 10^5 V·s/C. At last, the trap density of the H-terminated diamond FETs is compared with other state-of-the-art GaN and Si based devices. A moderate trap density was obtained without any interface optimization, suggesting that H-terminated diamond FETs could be a promising future technology for power electronics.}}, articleno = {{110204}}, author = {{Wang, Hongyue and Simoen, Eddy and Ge, Lei and Liu, Yuebo and Liu, Chang and Xu, Mingsheng and Shi, Yijun and Cai, Zongqi and Peng, Yan and Wang, Xiwei and Wang, Jinwang}}, issn = {{0925-9635}}, journal = {{DIAMOND AND RELATED MATERIALS}}, keywords = {{Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials,Hydrogen-terminated,Diamond,Low frequency noise,FETs,Traps,GR noise}}, language = {{eng}}, pages = {{7}}, title = {{Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs}}, url = {{http://doi.org/10.1016/j.diamond.2023.110204}}, volume = {{138}}, year = {{2023}}, }
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