High frequency characterization of PZT thin-films deposited by chemical solution deposition on SOI for integrated high speed electro-optic modulators
- Author
- Gilles Freddy Feutmba (UGent) , Leandro Da Silva (UGent) , Nishant Singh (UGent) , Laurens Breyne, Kobe De Geest (UGent) , John Puthenparampil George (UGent) , Johan Bauwelinck (UGent) , Dries Van Thourhout (UGent) , Xin Yin (UGent) and Jeroen Beeckman (UGent)
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- Project
- Abstract
- The increasing demand for high data rates and low power consumption puts silicon photonics at the edge of its capabilities. The heterogeneous integration of optical ferro-electric materials on silicon enhances the functionality of the silicon on insulator (SOI) platform to meet these demands. Lead zirconate titanate (PZT) thin films with a large Pockels coefficient and good optical quality can be directly integrated on SOI waveguides for fast electro-optic modulators. In this work, the relative permittivity and dielectric loss of PZT thin films deposited by chemical solution deposition on SOI substrates are analyzed at high frequencies. We extract & epsilon;r = 1650 - 2129 and tan (& delta;) = 0.170 - 0.209 for the PZT thin films in the frequency range 1-67GHz. We show the possibility of achieving bandwidths beyond 60GHz via a Mach-Zehnder modulator with V & pi; = 7V, suitable for next generation data communication systems.& COPY; 2023 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
- Keywords
- Electronic, Optical and Magnetic Materials
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Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-01H43RC0SMPNKWVH36TNW9Z59N
- MLA
- Feutmba, Gilles Freddy, et al. “High Frequency Characterization of PZT Thin-Films Deposited by Chemical Solution Deposition on SOI for Integrated High Speed Electro-Optic Modulators.” OPTICAL MATERIALS EXPRESS, vol. 13, no. 7, 2023, pp. 2120–34, doi:10.1364/ome.494148.
- APA
- Feutmba, G. F., Da Silva, L., Singh, N., Breyne, L., De Geest, K., Puthenparampil George, J., … Beeckman, J. (2023). High frequency characterization of PZT thin-films deposited by chemical solution deposition on SOI for integrated high speed electro-optic modulators. OPTICAL MATERIALS EXPRESS, 13(7), 2120–2134. https://doi.org/10.1364/ome.494148
- Chicago author-date
- Feutmba, Gilles Freddy, Leandro Da Silva, Nishant Singh, Laurens Breyne, Kobe De Geest, John Puthenparampil George, Johan Bauwelinck, Dries Van Thourhout, Xin Yin, and Jeroen Beeckman. 2023. “High Frequency Characterization of PZT Thin-Films Deposited by Chemical Solution Deposition on SOI for Integrated High Speed Electro-Optic Modulators.” OPTICAL MATERIALS EXPRESS 13 (7): 2120–34. https://doi.org/10.1364/ome.494148.
- Chicago author-date (all authors)
- Feutmba, Gilles Freddy, Leandro Da Silva, Nishant Singh, Laurens Breyne, Kobe De Geest, John Puthenparampil George, Johan Bauwelinck, Dries Van Thourhout, Xin Yin, and Jeroen Beeckman. 2023. “High Frequency Characterization of PZT Thin-Films Deposited by Chemical Solution Deposition on SOI for Integrated High Speed Electro-Optic Modulators.” OPTICAL MATERIALS EXPRESS 13 (7): 2120–2134. doi:10.1364/ome.494148.
- Vancouver
- 1.Feutmba GF, Da Silva L, Singh N, Breyne L, De Geest K, Puthenparampil George J, et al. High frequency characterization of PZT thin-films deposited by chemical solution deposition on SOI for integrated high speed electro-optic modulators. OPTICAL MATERIALS EXPRESS. 2023;13(7):2120–34.
- IEEE
- [1]G. F. Feutmba et al., “High frequency characterization of PZT thin-films deposited by chemical solution deposition on SOI for integrated high speed electro-optic modulators,” OPTICAL MATERIALS EXPRESS, vol. 13, no. 7, pp. 2120–2134, 2023.
@article{01H43RC0SMPNKWVH36TNW9Z59N,
abstract = {{The increasing demand for high data rates and low power consumption puts silicon photonics at the edge of its capabilities. The heterogeneous integration of optical ferro-electric materials on silicon enhances the functionality of the silicon on insulator (SOI) platform to meet these demands. Lead zirconate titanate (PZT) thin films with a large Pockels coefficient and good optical quality can be directly integrated on SOI waveguides for fast electro-optic modulators. In this work, the relative permittivity and dielectric loss of PZT thin films deposited by chemical solution deposition on SOI substrates are analyzed at high frequencies. We extract & epsilon;r = 1650 - 2129 and tan (& delta;) = 0.170 - 0.209 for the PZT thin films in the frequency range 1-67GHz. We show the possibility of achieving bandwidths beyond 60GHz via a Mach-Zehnder modulator with V & pi; = 7V, suitable for next generation data communication systems.& COPY; 2023 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement}},
author = {{Feutmba, Gilles Freddy and Da Silva, Leandro and Singh, Nishant and Breyne, Laurens and De Geest, Kobe and Puthenparampil George, John and Bauwelinck, Johan and Van Thourhout, Dries and Yin, Xin and Beeckman, Jeroen}},
issn = {{2159-3930}},
journal = {{OPTICAL MATERIALS EXPRESS}},
keywords = {{Electronic, Optical and Magnetic Materials}},
language = {{eng}},
number = {{7}},
pages = {{2120--2134}},
title = {{High frequency characterization of PZT thin-films deposited by chemical solution deposition on SOI for integrated high speed electro-optic modulators}},
url = {{http://doi.org/10.1364/ome.494148}},
volume = {{13}},
year = {{2023}},
}
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