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Colloidal III-V quantum dot photodiodes for short-wave infrared photodetection

Jari Leemans (UGent) , Vladimir Pejovic, Epimitheas Georgitzikis, Matthias Minjauw (UGent) , Abu Bakar Siddik, Junning Deng, Yinghuan Kuang, Günther Roelkens (UGent) , Christophe Detavernier (UGent) , Itai Lieberman, et al.
(2022) ADVANCED SCIENCE. 9(17).
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Abstract
Short-wave infrared (SWIR) image sensors based on colloidal quantum dots (QDs) are characterized by low cost, small pixel pitch, and spectral tunability. Adoption of QD-SWIR imagers is, however, hampered by a reliance on restricted elements such as Pb and Hg. Here, QD photodiodes, the central element of a QD image sensor, made from non-restricted In(As,P) QDs that operate at wavelengths up to 1400 nm are demonstrated. Three different In(As,P) QD batches that are made using a scalable, one-size-one-batch reaction and feature a band-edge absorption at 1140, 1270, and 1400 nm are implemented. These QDs are post-processed to obtain In(As,P) nanocolloids stabilized by short-chain ligands, from which semiconducting films of n-In(As,P) are formed through spincoating. For all three sizes, sandwiching such films between p-NiO as the hole transport layer and Nb:TiO2 as the electron transport layer yields In(As,P) QD photodiodes that exhibit best internal quantum efficiencies at the QD band gap of 46 +/- 5% and are sensitive for SWIR light up to 1400 nm.
Keywords
SOLAR-CELLS, THIN-FILMS, NANOCRYSTALS, PROSPECTS, SURFACE, InAs quantum dots, infrared sensing, printed photonics

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MLA
Leemans, Jari, et al. “Colloidal III-V Quantum Dot Photodiodes for Short-Wave Infrared Photodetection.” ADVANCED SCIENCE, vol. 9, no. 17, 2022, doi:10.1002/advs.202200844.
APA
Leemans, J., Pejovic, V., Georgitzikis, E., Minjauw, M., Siddik, A. B., Deng, J., … Hens, Z. (2022). Colloidal III-V quantum dot photodiodes for short-wave infrared photodetection. ADVANCED SCIENCE, 9(17). https://doi.org/10.1002/advs.202200844
Chicago author-date
Leemans, Jari, Vladimir Pejovic, Epimitheas Georgitzikis, Matthias Minjauw, Abu Bakar Siddik, Junning Deng, Yinghuan Kuang, et al. 2022. “Colloidal III-V Quantum Dot Photodiodes for Short-Wave Infrared Photodetection.” ADVANCED SCIENCE 9 (17). https://doi.org/10.1002/advs.202200844.
Chicago author-date (all authors)
Leemans, Jari, Vladimir Pejovic, Epimitheas Georgitzikis, Matthias Minjauw, Abu Bakar Siddik, Junning Deng, Yinghuan Kuang, Günther Roelkens, Christophe Detavernier, Itai Lieberman, Pawel E. Malinowski, David Cheyns, and Zeger Hens. 2022. “Colloidal III-V Quantum Dot Photodiodes for Short-Wave Infrared Photodetection.” ADVANCED SCIENCE 9 (17). doi:10.1002/advs.202200844.
Vancouver
1.
Leemans J, Pejovic V, Georgitzikis E, Minjauw M, Siddik AB, Deng J, et al. Colloidal III-V quantum dot photodiodes for short-wave infrared photodetection. ADVANCED SCIENCE. 2022;9(17).
IEEE
[1]
J. Leemans et al., “Colloidal III-V quantum dot photodiodes for short-wave infrared photodetection,” ADVANCED SCIENCE, vol. 9, no. 17, 2022.
@article{01GR6M7KCT3ZADNZ8MF5GNA17Q,
  abstract     = {{Short-wave infrared (SWIR) image sensors based on colloidal quantum dots (QDs) are characterized by low cost, small pixel pitch, and spectral tunability. Adoption of QD-SWIR imagers is, however, hampered by a reliance on restricted elements such as Pb and Hg. Here, QD photodiodes, the central element of a QD image sensor, made from non-restricted In(As,P) QDs that operate at wavelengths up to 1400 nm are demonstrated. Three different In(As,P) QD batches that are made using a scalable, one-size-one-batch reaction and feature a band-edge absorption at 1140, 1270, and 1400 nm are implemented. These QDs are post-processed to obtain In(As,P) nanocolloids stabilized by short-chain ligands, from which semiconducting films of n-In(As,P) are formed through spincoating. For all three sizes, sandwiching such films between p-NiO as the hole transport layer and Nb:TiO2 as the electron transport layer yields In(As,P) QD photodiodes that exhibit best internal quantum efficiencies at the QD band gap of 46 +/- 5% and are sensitive for SWIR light up to 1400 nm.}},
  articleno    = {{2200844}},
  author       = {{Leemans, Jari and  Pejovic, Vladimir and  Georgitzikis, Epimitheas and Minjauw, Matthias and  Siddik, Abu Bakar and Deng, Junning and  Kuang, Yinghuan and Roelkens, Günther and Detavernier, Christophe and  Lieberman, Itai and  Malinowski, Pawel E. and  Cheyns, David and Hens, Zeger}},
  issn         = {{2198-3844}},
  journal      = {{ADVANCED SCIENCE}},
  keywords     = {{SOLAR-CELLS,THIN-FILMS,NANOCRYSTALS,PROSPECTS,SURFACE,InAs quantum dots,infrared sensing,printed photonics}},
  language     = {{eng}},
  number       = {{17}},
  pages        = {{8}},
  title        = {{Colloidal III-V quantum dot photodiodes for short-wave infrared photodetection}},
  url          = {{http://doi.org/10.1002/advs.202200844}},
  volume       = {{9}},
  year         = {{2022}},
}
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