Study and characterization of GaN MOS capacitors : planar vs trench topographies
- Author
- K. Mukherjee, C. De Santi, S. You, K. Geens, M. Borga, S. Decoutere, Benoit Bakeroot (UGent) , P. Diehle, F. Altmann, G. Meneghesso, E. Zanoni and M. Meneghini
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Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-01GP3FXPCJXGV75NPM23G1900N
- MLA
- Mukherjee, K., et al. “Study and Characterization of GaN MOS Capacitors : Planar vs Trench Topographies.” APPLIED PHYSICS LETTERS, vol. 120, no. 14, 2022, doi:10.1063/5.0087245.
- APA
- Mukherjee, K., De Santi, C., You, S., Geens, K., Borga, M., Decoutere, S., … Meneghini, M. (2022). Study and characterization of GaN MOS capacitors : planar vs trench topographies. APPLIED PHYSICS LETTERS, 120(14). https://doi.org/10.1063/5.0087245
- Chicago author-date
- Mukherjee, K., C. De Santi, S. You, K. Geens, M. Borga, S. Decoutere, Benoit Bakeroot, et al. 2022. “Study and Characterization of GaN MOS Capacitors : Planar vs Trench Topographies.” APPLIED PHYSICS LETTERS 120 (14). https://doi.org/10.1063/5.0087245.
- Chicago author-date (all authors)
- Mukherjee, K., C. De Santi, S. You, K. Geens, M. Borga, S. Decoutere, Benoit Bakeroot, P. Diehle, F. Altmann, G. Meneghesso, E. Zanoni, and M. Meneghini. 2022. “Study and Characterization of GaN MOS Capacitors : Planar vs Trench Topographies.” APPLIED PHYSICS LETTERS 120 (14). doi:10.1063/5.0087245.
- Vancouver
- 1.Mukherjee K, De Santi C, You S, Geens K, Borga M, Decoutere S, et al. Study and characterization of GaN MOS capacitors : planar vs trench topographies. APPLIED PHYSICS LETTERS. 2022;120(14).
- IEEE
- [1]K. Mukherjee et al., “Study and characterization of GaN MOS capacitors : planar vs trench topographies,” APPLIED PHYSICS LETTERS, vol. 120, no. 14, 2022.
@article{01GP3FXPCJXGV75NPM23G1900N,
articleno = {{143501}},
author = {{Mukherjee, K. and De Santi, C. and You, S. and Geens, K. and Borga, M. and Decoutere, S. and Bakeroot, Benoit and Diehle, P. and Altmann, F. and Meneghesso, G. and Zanoni, E. and Meneghini, M.}},
issn = {{0003-6951}},
journal = {{APPLIED PHYSICS LETTERS}},
language = {{eng}},
number = {{14}},
pages = {{5}},
title = {{Study and characterization of GaN MOS capacitors : planar vs trench topographies}},
url = {{http://doi.org/10.1063/5.0087245}},
volume = {{120}},
year = {{2022}},
}
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