Academic Bibliography

 Search 200 years of publications by Ghent University researchers.
Advanced search
1 file | 1.14 MB
Add to list
  1. Search results
  2. 200 V GaN-on-SOI Smart Power Platform...

200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs

T. Cosnier, O. Syshchyk, B. De Jaeger, K. Geens, D. Cingu, Elena Fabris, M. Borga, A. Vohra, M. Zhao, Benoit Bakeroot (UGent) , et al.
(2021) 2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). In IEEE International Electron Devices Meeting
Author
Organization
Abstract
This paper demonstrates a 200 V GaN-on-SOI smart power integrated circuits (ICs) platform developped on 200 mm substrates. Depletion-mode (d-mode) MIS-HEMTs and Gated-Edge-Termination Schottky barrier diodes (GET-SBDs) have been successfully integrated in an enhancement-mode (e-mode) HEMT technology baseline. A variety of low-voltage analog/logic devices and passive components further supports the GaN ICs platform. These results significantly contribute to monolithic GaN integration for power ICs and create key opportunities for the development of GaN power circuits and complex converter topologies.

Downloads

  • Download
    (...).pdf
    • full text (Published version)
    • |
    • UGent only
    • |
    • PDF
    • |
    • 1.14 MB

Citation

Please use this url to cite or link to this publication:

MLA
Cosnier, T., et al. “200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs.” 2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), IEEE, 2021, doi:10.1109/IEDM19574.2021.9720591.
APA
Cosnier, T., Syshchyk, O., De Jaeger, B., Geens, K., Cingu, D., Fabris, E., … Decoutere, S. (2021). 200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs. 2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). Presented at the IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/IEDM19574.2021.9720591
Chicago author-date
Cosnier, T., O. Syshchyk, B. De Jaeger, K. Geens, D. Cingu, Elena Fabris, M. Borga, et al. 2021. “200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs.” In 2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). IEEE. https://doi.org/10.1109/IEDM19574.2021.9720591.
Chicago author-date (all authors)
Cosnier, T., O. Syshchyk, B. De Jaeger, K. Geens, D. Cingu, Elena Fabris, M. Borga, A. Vohra, M. Zhao, Benoit Bakeroot, D. Wellekens, A. Magnani, P. Vudumula, U. Chatterjee, R. Langer, and S. Decoutere. 2021. “200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs.” In 2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). IEEE. doi:10.1109/IEDM19574.2021.9720591.
Vancouver
1.
Cosnier T, Syshchyk O, De Jaeger B, Geens K, Cingu D, Fabris E, et al. 200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs. In: 2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). IEEE; 2021.
IEEE
[1]
T. Cosnier et al., “200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs,” in 2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), San Francisco, CA, USA, 2021.
@inproceedings{01GP3FA4EJSZ5K8W0C36DPQBZ1,
  abstract     = {{This paper demonstrates a 200 V GaN-on-SOI smart power integrated circuits (ICs) platform developped on 200 mm substrates. Depletion-mode (d-mode) MIS-HEMTs and Gated-Edge-Termination Schottky barrier diodes (GET-SBDs) have been successfully integrated in an enhancement-mode (e-mode) HEMT technology baseline. A variety of low-voltage analog/logic devices and passive components further supports the GaN ICs platform. These results significantly contribute to monolithic GaN integration for power ICs and create key opportunities for the development of GaN power circuits and complex converter topologies.}},
  author       = {{Cosnier, T. and  Syshchyk, O. and  De Jaeger, B. and  Geens, K. and  Cingu, D. and  Fabris, Elena and  Borga, M. and  Vohra, A. and  Zhao, M. and Bakeroot, Benoit and  Wellekens, D. and  Magnani, A. and  Vudumula, P. and  Chatterjee, U. and  Langer, R. and  Decoutere, S.}},
  booktitle    = {{2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)}},
  isbn         = {{9781665425728}},
  issn         = {{2380-9248}},
  language     = {{eng}},
  location     = {{San Francisco, CA, USA}},
  pages        = {{4}},
  publisher    = {{IEEE}},
  title        = {{200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs}},
  url          = {{http://doi.org/10.1109/IEDM19574.2021.9720591}},
  year         = {{2021}},
}
Altmetric
View in Altmetric
Web of Science
Times cited: