NH3 PDA temperature-impact on low-frequency noise behavior of Si0.7Ge0.3 pFinFETs
- Author
- Duan Xie, Eddy Simoen (UGent) , Hiroaki Arimura, Elena Capogreco, Jerome Mitard and Naoto Horiguchi
- Organization
- Abstract
- The low-frequency (LF) noise characterization of Si<sub>0.7</sub>Ge<sub>0.3</sub> pFinFETs and transistors’ performance were analyzed for different NH<sub>3</sub> post deposition annealing (PDA) temperatures. The flicker noise of these pFinFETs is dominated by carrier number fluctuations at low and intermediate drain currents. At high gate overdrive, the voltage noise Svg increases dramatically and the effect of the access resistance cannot be ignored. By analyzing the input-referred voltage noise power spectral density(PSD) at flat band voltage ( S<sub>vgfb</sub> ), we will demonstrate that nitridation of the high- κ layer at 650 °C yields the best quality gate-stack and also results in the highest mobility. While NH<sub>3</sub> PDA temperature above 650 °C may introduce more hydrogen at the oxide layer and at the interface, hydrogen can induce hole traps and interface traps that degrade the quality of the gate-stack and reduce the mobility.
- Keywords
- Low-frequency (LF) noise, mobility, NH3 PDA temperature, Si0.7Ge0.3 pFinFETs, MOBILIY, FINFETS
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-01GNW1MHQ79GSZC3441MEAJQR4
- MLA
- Xie, Duan, et al. “NH3 PDA Temperature-Impact on Low-Frequency Noise Behavior of Si0.7Ge0.3 PFinFETs.” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 69, no. 12, 2022, pp. 6985–90, doi:10.1109/ted.2022.3212324.
- APA
- Xie, D., Simoen, E., Arimura, H., Capogreco, E., Mitard, J., & Horiguchi, N. (2022). NH3 PDA temperature-impact on low-frequency noise behavior of Si0.7Ge0.3 pFinFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 69(12), 6985–6990. https://doi.org/10.1109/ted.2022.3212324
- Chicago author-date
- Xie, Duan, Eddy Simoen, Hiroaki Arimura, Elena Capogreco, Jerome Mitard, and Naoto Horiguchi. 2022. “NH3 PDA Temperature-Impact on Low-Frequency Noise Behavior of Si0.7Ge0.3 PFinFETs.” IEEE TRANSACTIONS ON ELECTRON DEVICES 69 (12): 6985–90. https://doi.org/10.1109/ted.2022.3212324.
- Chicago author-date (all authors)
- Xie, Duan, Eddy Simoen, Hiroaki Arimura, Elena Capogreco, Jerome Mitard, and Naoto Horiguchi. 2022. “NH3 PDA Temperature-Impact on Low-Frequency Noise Behavior of Si0.7Ge0.3 PFinFETs.” IEEE TRANSACTIONS ON ELECTRON DEVICES 69 (12): 6985–6990. doi:10.1109/ted.2022.3212324.
- Vancouver
- 1.Xie D, Simoen E, Arimura H, Capogreco E, Mitard J, Horiguchi N. NH3 PDA temperature-impact on low-frequency noise behavior of Si0.7Ge0.3 pFinFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022;69(12):6985–90.
- IEEE
- [1]D. Xie, E. Simoen, H. Arimura, E. Capogreco, J. Mitard, and N. Horiguchi, “NH3 PDA temperature-impact on low-frequency noise behavior of Si0.7Ge0.3 pFinFETs,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 69, no. 12, pp. 6985–6990, 2022.
@article{01GNW1MHQ79GSZC3441MEAJQR4,
abstract = {{The low-frequency (LF) noise characterization of Si<sub>0.7</sub>Ge<sub>0.3</sub> pFinFETs and transistors’ performance were analyzed for different NH<sub>3</sub> post deposition annealing (PDA) temperatures. The flicker noise of these pFinFETs is dominated by carrier number fluctuations at low and intermediate drain currents. At high gate overdrive, the voltage noise Svg increases dramatically and the effect of the access resistance cannot be ignored. By analyzing the input-referred voltage noise power spectral density(PSD) at flat band voltage ( S<sub>vgfb</sub> ), we will demonstrate that nitridation of the high- κ layer at 650 °C yields the best quality gate-stack and also results in the highest mobility. While NH<sub>3</sub> PDA temperature above 650 °C may introduce more hydrogen at the oxide layer and at the interface, hydrogen can induce hole traps and interface traps that degrade the quality of the gate-stack and reduce the mobility.}},
author = {{Xie, Duan and Simoen, Eddy and Arimura, Hiroaki and Capogreco, Elena and Mitard, Jerome and Horiguchi, Naoto}},
issn = {{0018-9383}},
journal = {{IEEE TRANSACTIONS ON ELECTRON DEVICES}},
keywords = {{Low-frequency (LF) noise,mobility,NH3 PDA temperature,Si0.7Ge0.3 pFinFETs,MOBILIY,FINFETS}},
language = {{eng}},
number = {{12}},
pages = {{6985--6990}},
title = {{NH3 PDA temperature-impact on low-frequency noise behavior of Si0.7Ge0.3 pFinFETs}},
url = {{http://doi.org/10.1109/ted.2022.3212324}},
volume = {{69}},
year = {{2022}},
}
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