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Project: A fundamental investigation on the relationship between etch rates, reaction mechanisms and resulting profiles at resist edges for binary and mixed III V semiconductors.

01-OCT-94 – 31-DEC-99

In this project, the mechanisms of wet etching processes at binary and mixed III V semiconductors will be investigated by kinetic and electrochemical measurements in order to correlate these mechanisms to the etching kinetics and to the surface morphology after etching. the emphasis will be put on the study of etching profiles near mask edges, which is important to practical applications in micro- and optoelectronics.