Project: Investigation on the kinetics and the mechanisms of etch processes at ternary III-V semiconductors.
- project duration
- 01-JAN-00 – 31-DEC-99
- The objective of the planned research is to get information and insight concerning the rates, the mechanisms and the ensueing morphologies of etch processes at mixed III-V semiconductor surfaces, and in particular concerning the influence of the semiconductor composition upon these phenomena. This investigation will be based upon a combination of voltammetric and etch rate measurements.