Project: Investigation on the kinetics and the mechanisms of etching processes at semiconductor surfaces.
- project duration
- 01-JAN-00 – 31-DEC-99
- The etching behaviour of the semiconductor InP will be quantitatively investigated. Electrochemical measurements will be performed at the InP electrode in order to obtain information on the reaction steps of the etching processes and hence to unravelthe mechanisms of the latter. The relationship between etch rate, mechanism and resulting morphology will be studied.