Project: Oxygen related defects in high purity silicon : formation, structure, electrical and optical properties.
- project duration
- 01-JAN-97 – 31-DEC-02
- The aim is to develop a quantitative model to predict the behaviour of oxygen in advanced silicon upon thermal treatments. The program will also contribute to a better knowledge of properties, identity and electrical and optical effects of oxygen related defects, as well as to the development of characterisation procedures of strongly doped silicon.