Project: A fundamental study of etching processes at ternary and quaternary semiconducting III-V compound layers, grown on a InP-subtrate.
- project duration
- 01-OCT-93 – 31-DEC-99
- Electrochemical and etching experiments will be performed on the semiconducting materials In(x)Ga(1-x)As and In(x)Ga(1-x)As(y)P(1-y). The factors which determine the reactivity will be deduced and reaction mechanisms will be proposed. This know-ledge can lead to a better understanding and control of etching processes.