Project: Infrared light-emitting components in II-V materials
- project duration
- 01-JAN-94 – 31-DEC-99
- Aim of this thesis is to devellop light-emitting diodes and laserdiodes with an emission wavelength longer than 1.5 microm. They will bemade from small bandgap III-V materials grown by Molecular Beam Epitaxy. This research is concentrated mainly onternaries and quaternaries based on InAs, InSb and GaSb.