Project: Experimental study and characterization of structures realized with silicides on Si and on III-V semiconductors.
- project duration
- 01-JAN-00 – 31-DEC-99
- Experimental study of Ti- and Co-silicides as temperature resistent gatemetals in GaAs MESFET's and InP Schottky diodes. Formation of CoSi2/Si barriers by several methods. Application of fast isothermal diffusion in the formation of shallow abrupt junctions in InP.