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Project: Experimental study and characterization of structures realized with silicides on Si and on III-V semiconductors.

01-JAN-00 – 31-DEC-99

Experimental study of Ti- and Co-silicides as temperature resistent gatemetals in GaAs MESFET's and InP Schottky diodes. Formation of CoSi2/Si barriers by several methods. Application of fast isothermal diffusion in the formation of shallow abrupt junctions in InP.