Project: Investigation on the kinetics and mechanisms of etching processes at ternary III V semiconductors.
- project duration
- 01-OCT-94 – 31-DEC-99
- The etching behaviour in aqueous solutions of A1xGa1-xAs-layers, grown on GaAs, will be investigated by (photo)electrochemical techniques, by the determination of the amount of dissolved semiconductor material and by observing the morphology of the etched surfaces. Basing upon the proposed etching mechanisms, material selective etching processes will be developed.