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Project: A fundamental study of etching processes at ternary and quaternary semiconducting III V compound layers, grown on an InP substrate.

project duration
01-OCT-94 – 31-DEC-99
abstract
Electrochemical and etching experiments will be performed on the semiconducting materials InxGa1-xAs and InxGa1-xAsyP1-y. The factors which determine the reactivity will be deduced and reaction mechanisms will be proposed. This knowledge can lead to a better understanding and control of etching processes.