Project: A fundamental study of etching processes at ternary and quaternary semiconducting III V compound layers, grown on an InP substrate.
01-OCT-94 – 31-DEC-99
Electrochemical and etching experiments will be performed on the semiconducting materials InxGa1-xAs and InxGa1-xAsyP1-y. The factors which determine the reactivity will be deduced and reaction mechanisms will be proposed. This knowledge can lead to a better understanding and control of etching processes.