Project: A ballistic electron emission microscopy (BEEM) study of PtSi-Si Schottky diodes for infrared detectors.
- project duration
- 01-JAN-97 – 31-DEC-99
- PtSi/Si Schottky barriers are widely used as high-efficiency photodetectors for infrared light. It is the aim of this research project to investigate the influence of several technologically important processing treatments on this barrier height distribution. The main processes which will be considered are : the cleaning of the Si-substrate the effect of dry etching and the patterning of Si. Moreover, the influence of the substrate's doping concentration, the substrate's roughness and the presence of stress fields, will be investigated.