Project: A fundamental study of etch processes at III-V semi conductors for optoelectronic components.
- project duration
- 01-JAN-94 – 31-DEC-00
- Research will be undertaken on light sources (lasers, LED's) and waveguides based upon GaAs/A1xGa1-xAs/InxGa1-xAs and InP/InxGa1-x As/InxGa1-xA1yP1-y structures. A fundamental study of wet as well as dry etch processes will be performed. The kinetics, selectivity, resultant morphology and mechanisms of wet etch processes will be investigated. The damage induced by dry etching and its removal will be studied.