Ghent University Academic Bibliography

Advanced

Project: Investigation of Schottky barriers by ballistic electron emission microscopy (BEEM).

project duration
01-MAY-96 – 31-DEC-99
abstract
BEEM will be used to determine the Schottky barrier height. The variation of the barrier height over the interface will be studied. Next to the III-V semiconductors GaAs and InP, also Si will be investigated. Investigation of Schottky barriers by ballistic electron emission microscopy (BEEM).