Project: A fundamental study of metal/semiconductor contacts.
- project duration
- 01-JAN-00 – 31-DEC-99
- A first research topic concerns the influence of surface heterogenities on Schottky barrier behaviour. Moreover, we want to study the role of defects in metal/semiconductor contacts. These defects will be introduced by sputter etch cleaning of technologically important semiconductors. We also plan research on MIS-structures with a very thin insulating layer on Si. Also correlation between surface stoichiometry of the semiconductorsubstrate and Schottky barrier height will be studied.